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參數(shù)資料
| 型號： | DWEP30-10 |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diodes & FRED |
| 中文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-1 |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 765K |
| 代理商： | DWEP30-10 |
2
2004 IXYS All rights reserved
Symbols and Definitions
C
ies
C
-di/dt
I
C
I
D
I
F
I
F(AV)M
I
FSM
I
GT
I
R
I
RM
I
T
I
T(AV)M
Input capacitance of IGBT
Input capacitance of MOSFET
Rate of decrease of forward current
DC collector current
Drain current
Forward current of diode
Maximum average forward current at specified T
h
Peak one cycle surge forward current
Gate trigger current
Reverse current
Maximum peak recovery current
Forward current of thyristor
Maximum average on-state current of a thyristor
at specified T
Maximum surge current of a thyristor
Static drain-source on-state resistance
Thermal resistance junction to case
Slope resistance of a thyristor or diode
(for power loss calculations)
Case temperature
Heatsink temperature
Current fall time with inductive load
Junction temperature
Maximum junction temperature
Reverse recovery time of a diode
Collector-emitter saturation voltage
Maximum collector-emitter voltage
Maximum repetitive forward blocking
voltage of thyristor
Drain-source break-down voltage
Forward voltage of diode
Reverse voltage
Maximum peak reverse voltage of thyristor or
diode
On-state voltage of thyristor
Threshold voltage of thyristors or diodes (for
power loss calculation only)
I
TSM
R
DS(on)
R
thjc
r
T
T
case
T
h
t
fi
T
j
,
T
(vj)
T
jm
,
T
(vj)m
t
rr
V
CE(sat)
V
CES
V
DRM
V
DSS
V
F
V
R
V
RRM
V
T
V
T0
Chip and DCB Ceramic Substrates Data book
Edition 2004
Published by IXYS Semiconductor GmbH
Marketing Communications
Edisonstrae 15, D-68623 Lampertheim
IXYS Semiconductor GmbH All Rights reserved
As far as patents or other rights of third parties are concerned, liability is only
assumed for chips and DCB parts per se, not for applications, processes and
circuits implemented with components or assemblies. Terms of delivery and the
right to change design or specifications are reserved.
Nomenclature
IGBT and MOSFET Discrete
IXSD 40N60A
IX
(Example)
IXYS
Die technology
NPT
3
IGBT
HiPerFETTM Power MOSFET
Fast IGBT
IGBT with SCSOA capability
Standard Power MOSFET
Unassembled chip (die)
E
F
G
S
T
D
40
Current rating, 40 = 40 A
N-channel type
P-channel type
Voltage class, 60 = 600 V
N
P
60
xx
MOSFET
Prime RDS(on) for standard MOSFET
Low gate charge die
Low gate charge die, 2nd generation
PolarHTTM Power MOSFET
Linear Mode MOSFET
IGBT
No letter, low VCE(sat)
Or A2, std speed type
Or B2, high speed type
Or C2, very high speed type
A
Q
Q2
P
L
--
A
B
C
W-CWP 55-12/18
(Thyristor Example)
W
Package type
C
Chip function
C = Silicon phase control thyristor
W
Unassembled chip
P
Process designator
P = Planar passivated chip
cathode on top
55
Current rating value of one chip in A
12/18
Voltage class, 12/18 = 1200 up to 1800 V
Diode and Thyristor Chips
C-DWEP 69-12
(Diode Example)
C
Package type
D
Chip function
D = Silicon rectifier diode
W
Unassembled chip
EP
Process designator
EP = Epitaxial rectifier diode
N = Rectifier diode, cathode on top
P = Rectifier diode, anode on top
FN = Fast Rectifier diode, cathode on top
FP = Fast Rectifier diode, anode on top
69
Current rating value of one chip in A
-12
Voltage class, 12 = 1200 V
Registration No.:
001947 TS2/765/17557
Registration No.:
001947
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DWEP35-06 | Rectifier Diodes & FRED |
| DWEP49-12 | Rectifier Diodes & FRED |
| DWEP50-10 | Rectifier Diodes & FRED |
| DWEP55-06 | Rectifier Diodes & FRED |
| DWEP6-12 | Rectifier Diodes & FRED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DWEP3-10 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Rectifier Diodes & FRED |
| DWEP35-06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Rectifier Diodes & FRED |
| DWEP37-02 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Rectifier Diodes & FRED |
| DWEP49-12 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Rectifier Diodes & FRED |
| DWEP50-10 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Rectifier Diodes & FRED |
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