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| 型號： | DXT3150-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 5 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEEN, PLASTIC, SOT89-3L, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 199K |
| 代理商： | DXT3150-13 |
DXT3150
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
NEW
PROD
UC
T
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3) @ TA = 25°C
PD
1
W
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
V
IC = 10mA, IB = 0
Collector Cut-off Current
ICBO
1.0
μA
VCB = 50V, IE = 0
Emitter Cut-off Current
IEBO
1.0
μA
VEB = 7.0V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
0.35
0.50
V
IC = 3.0A, IB = 150mA
IC = 4.0A, IB = 200mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.10
1.40
V
IC = 3.0A, IB = 150mA
IC = 4.0A, IB = 200mA
DC Current Gain
hFE
250
150
50
550
IC = 500mA, VCE = 2.0V
IC = 2.0A, VCE = 2.0V
IC = 5.0A, VCE = 2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
220
MHz
IC = 50mA, VCE = 6.0V,
f = 100MHz
Output Capacitance
Cobo
50
pF
VCB = 10V, IE = 0, f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
DS31157 Rev. 3 - 2
1 of 3
www.diodes.com
DXT3150
Diodes Incorporated
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