| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IXTH110N10L2 | IXYS | MOSFET N-CH 100V 110A TO-247 | 0 | 60:$11.37750 |
| IXTQ60N20L2 | IXYS | MOSFET N-CH 200V 60A TO-3P | 0 | 60:$10.91500 |
| IXTP120P065T | IXYS | MOSFET P-CH 65V 120A TO-220 | 0 | 150:$3.48500 |
| IXTQ86N20T | IXYS | MOSFET N-CH 200V 86A TO-3P | 0 | 120:$3.46450 |
| IXTQ76N25T | IXYS | MOSFET N-CH 250V 76A TO-3P | 0 | 120:$3.46450 |
| IXFX64N60P3 | IXYS | MOSFET N-CH 600V 64A PLUS247 | 37 | 1:$10.90000 10:$9.81000 100:$8.06600 250:$7.41200 500:$6.75800 1,000:$5.88600 2,500:$5.66800 5,000:$5.45000 10,000:$5.34100 |
| IXTQ54N30T | IXYS | MOSFET N-CH 300V 54A TO-3P | 0 | 120:$3.46450 |
| IXFP180N10T2 | IXYS | MOSFET N-CH 100V 180A TO-220 | 0 | 150:$3.44400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 110A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 18 毫歐 @ 500mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 260nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 10500pF @ 25V |
| 功率 - 最大: | 600W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-247-3 |
| 供應(yīng)商設(shè)備封裝: | TO-247 |
| 包裝: | - |