元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | |
SI7866ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK 8SOIC | 0 | 3,000:$0.96930 |
SI4176DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
SI1433DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.9A SC70-6 | 0 | 3,000:$0.24650 |
SUP85N03-3M6P-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V TO220AB | 0 | 500:$0.94500 |
SQR50N06-07L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO263 | 0 | 2,000:$0.94500 |
SI9410BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8SOIC | 0 | 2,500:$0.24360 |
IRF9530STRLPBF | Vishay Siliconix | MOSFET P-CH 100V 12A D2PAK | 0 | 800:$0.94343 |
SI4836DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 12V 8-SOIC | 0 | 2,500:$0.93690 |
SIRA00DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A SO8 PWR PK | 0 | 1:$2.38000 25:$1.83600 100:$1.66600 250:$1.49600 500:$1.29200 1,000:$1.08800 |
SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
SUM110N03-03P-E3 | Vishay Siliconix | MOSFET N-CH 30V 110A D2PAK | 0 | 800:$1.86000 |
IRLZ44STRRPBF | Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | 0 | 800:$1.49940 |
SI7862ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 16V PPAK 8SOIC | 0 | 3,000:$0.87210 |
SI3465DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3A 6-TSOP | 0 | 3,000:$0.21750 |
SI3447BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP | 0 | 3,000:$0.21750 |
SI1431DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.7A SOT363 | 0 | 3,000:$0.21750 |
SI5461EDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.83700 |
SI5459DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.22475 |
SI3434DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 4.6A 6-TSOP | 0 | 3,000:$0.25085 |
SI4390DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A 8SOIC | 0 | 2,500:$1.25550 |
SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 0 | 3,000:$0.21700 6,000:$0.20300 15,000:$0.18900 30,000:$0.17850 75,000:$0.17500 150,000:$0.16800 |
IRFBC30ASTRLPBF | Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | 0 | 800:$0.83003 |
SQ2308ES-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO236 | 0 | 3,000:$0.21700 |
SI4368DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC | 0 | 2,500:$0.82485 |
SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 8V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 16A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 23 毫歐 @ 1.5A,4.5V |
Id 時(shí)的 Vgs(th)(最大): | 800mV @ 250µA |
閘電荷(Qg) @ Vgs: | 26nC @ 4.5V |
輸入電容 (Ciss) @ Vds: | 1470pF @ 4V |
功率 - 最大: | 13W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-UFBGA |
供應(yīng)商設(shè)備封裝: | 6-microfoot |
包裝: | 帶卷 (TR) |