| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI7384DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.86400 |
| SI4124DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 1:$2.35000 25:$1.80920 100:$1.64150 250:$1.47400 500:$1.27300 1,000:$1.07200 |
| SQ7002K-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 320MA SOT23-3 | 0 | 3,000:$0.23200 |
| SI1404BDH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 1.9A SOT363 | 0 | 3,000:$0.21750 |
| SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 98 | 1:$0.77000 25:$0.53920 100:$0.46200 250:$0.39900 500:$0.34300 1,000:$0.26600 |
| SI4124DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8-SOIC | 0 | 2,500:$0.90450 5,000:$0.87100 12,500:$0.83750 25,000:$0.82075 62,500:$0.80400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 11A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 8.5 毫歐 @ 18A，10V |
| Id 時的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 18nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |