| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN1R8-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 100A D2PAK | 300 | 1:$2.33000 10:$2.10000 25:$1.88080 100:$1.69130 250:$1.50176 |
| PSMN1R8-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 100A D2PAK | 300 | 1:$2.33000 10:$2.10000 25:$1.88080 100:$1.69130 250:$1.50176 |
| BUK7613-75B,118 | NXP Semiconductors | MOSFET N-CH 75V 75A D2PAK | 618 | 1:$1.72000 10:$1.52100 25:$1.37280 100:$1.20130 250:$1.05352 |
| PHT6N06T,135 | NXP Semiconductors | MOSFET N-CH 55V 5.5A SOT223 | 2,716 | 1:$0.75000 10:$0.65700 25:$0.58040 100:$0.50600 250:$0.44044 500:$0.37492 1,000:$0.30030 |
| PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 0 | 800:$0.76410 1,600:$0.69045 2,400:$0.64442 5,600:$0.61220 20,000:$0.58918 40,000:$0.57077 80,000:$0.55236 |
| PSMN1R8-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 100A D2PAK | 0 | 800:$1.15183 1,600:$1.05705 2,400:$0.98415 5,600:$0.94770 20,000:$0.91125 40,000:$0.89667 80,000:$0.87480 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.8 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 170nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 10180pF @ 15V |
| 功率 - 最大: | 270W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | Digi-Reel® |