| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| CSD16340Q3 | Texas Instruments | MOSFET N-CH 25V 60A 8SON | 2,000 | 1:$1.40000 10:$1.23800 25:$1.11760 100:$0.97780 250:$0.85748 500:$0.76048 1,000:$0.60140 |
| CSD16340Q3 | Texas Instruments | MOSFET N-CH 25V 60A 8SON | 0 | 2,500:$0.54320 5,000:$0.51604 12,500:$0.49664 25,000:$0.48112 62,500:$0.46560 |
| CSD16415Q5 | Texas Instruments | MOSFET N-CH 25V 8SON | 9,239 | 1:$3.02000 10:$2.70900 25:$2.43600 100:$2.21550 250:$2.00552 500:$1.79550 1,000:$1.51200 |
| CSD16415Q5 | Texas Instruments | MOSFET N-CH 25V 8SON | 9,239 | 1:$3.02000 10:$2.70900 25:$2.43600 100:$2.21550 250:$2.00552 500:$1.79550 1,000:$1.51200 |
| CSD16415Q5 | Texas Instruments | MOSFET N-CH 25V 8SON | 7,500 | 2,500:$1.39700 5,000:$1.34400 12,500:$1.30200 25,000:$1.26000 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 60A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 4.5 毫歐 @ 20A，8V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 9.2nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 1350pF @ 12.5V |
| 功率 - 最大: | 3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-TDFN 裸露焊盤(pán) |
| 供應(yīng)商設(shè)備封裝: | 8-SON |
| 包裝: | 剪切帶 (CT) |