分離式半導體產(chǎn)品 BSC889N03LS G品牌、價格、PDF參數(shù)

BSC889N03LS G • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSC889N03LS G Infineon Technologies MOSFET N-CH 30V 45A TDSON-8 10,000 5,000:$0.33317
10,000:$0.31939
25,000:$0.31062
50,000:$0.30060
BSC900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TDSON 5,000 5,000:$0.84851
10,000:$0.81588
25,000:$0.79956
50,000:$0.78324
BSC889N03MS G Infineon Technologies MOSFET N-CH 30V 44A TDSON-8 9,987 1:$1.06000
10:$0.91800
25:$0.82120
100:$0.72450
250:$0.62792
500:$0.53130
1,000:$0.42263
2,500:$0.38640
BSC889N03MS G Infineon Technologies MOSFET N-CH 30V 44A TDSON-8 9,987 1:$1.06000
10:$0.91800
25:$0.82120
100:$0.72450
250:$0.62792
500:$0.53130
1,000:$0.42263
2,500:$0.38640
BSC889N03MS G Infineon Technologies MOSFET N-CH 30V 44A TDSON-8 5,000 5,000:$0.32603
10,000:$0.31395
25,000:$0.30188
50,000:$0.29705
125,000:$0.28980
BSP296 L6433 Infineon Technologies MOSFET N-CH 100V 1.1A SOT-223 6,718 1:$0.90000
10:$0.77700
25:$0.69520
100:$0.61350
250:$0.53172
500:$0.44990
1,000:$0.35788
BSS205N H6327 Infineon Technologies MOSFET N-CH 20V 2.5A SOT23 8,646 1:$0.55000
10:$0.38600
25:$0.31920
100:$0.25750
250:$0.18540
500:$0.14936
1,000:$0.11588
BSC889N03LS G • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 45A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 9 毫歐 @ 30A，10V
Id 時的 Vgs(th)（最大）: 2.2V @ 250µA
閘電荷(Qg) @ Vgs: 16nC @ 10V
輸入電容 (Ciss) @ Vds: 1300pF @ 15V
功率 - 最大: 28W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應商設備封裝: PG-TDSON-8
包裝: 帶卷 (TR)