| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| APTGT75H60T1G | Microsemi Power Products Group | POWER MOD IGBT FULL BRIDGE SP1 | 5 | 1:$61.88000 10:$58.24000 100:$51.87030 250:$49.14028 500:$47.32026 1,000:$45.50025 2,500:$44.59024 5,000:$43.68024 |
| APTGT50DA120TG | Microsemi Power Products Group | IGBT 1200V 75A 277W SP4 | 0 | 13:$62.43923 |
| APTGT35H120T1G | Microsemi Power Products Group | IGBT MOD TRENCH FULL BRIDGE SP1 | 0 | 14:$62.50857 |
| APTGT35H120T3G | Microsemi Power Products Group | IGBT MOD TRENCH FULL BRIDGE SP3 | 0 | 14:$62.78857 |
| 類別: | 半導體模塊 |
|---|---|
| IGBT 類型: | 溝道和場截止 |
| 配置: | 全橋反相器 |
| 電壓 - 集電極發(fā)射極擊穿（最大）: | 600V |
| Vge, Ic時的最大Vce（開）: | 1.9V @ 15V，75A |
| 電流 - 集電極 (Ic)（最大）: | 100A |
| 電流 - 集電極截止（最大）: | 250µA |
| Vce 時的輸入電容 (Cies): | 4.62nF @ 25V |
| 功率 - 最大: | 250W |
| 輸入: | 標準 |
| NTC 熱敏電阻: | 是 |
| 安裝類型: | 底座安裝 |
| 封裝/外殼: | SP1 |
| 供應商設備封裝: | SP1 |