| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4563DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 8-SOIC | 0 | 2,500:$0.97200 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 1:$2.49000 25:$1.91720 100:$1.73950 250:$1.56200 500:$1.34900 1,000:$1.13600 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 1:$2.49000 25:$1.91720 100:$1.73950 250:$1.56200 500:$1.34900 1,000:$1.13600 |
| SI7997DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 8-SOIC | 0 | 3,000:$0.95850 6,000:$0.92300 15,000:$0.88750 30,000:$0.86975 75,000:$0.85200 |
| SI7905DN-T1-E3 | Vishay Siliconix | MOSFET DUAL P-CH D-S 40V 1212-8 | 0 | 3,000:$0.90450 |
| SI4943BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 8-SOIC | 0 | 2,500:$0.90450 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 40V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 16 毫歐 @ 5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 85nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2390pF @ 20V |
| 功率 - 最大: | 3.25W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |