分離式半導(dǎo)體產(chǎn)品 SI5903DC-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI5903DC-T1-GE3 • 品牌、價(jià)格
元器件型號 廠商 描述 數(shù)量 價(jià)格
SI5903DC-T1-GE3 Vishay Siliconix MOSFET DUAL P-CH 20V 2.1A 1206-8 0 3,000:$0.83700
SI5504DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V CHIPFET 1206-8 0 3,000:$0.83700
SI4808DY-T1-GE3 Vishay Siliconix MOSFET N-CH/SCHOTTKY 30V 8SOIC 0 2,500:$0.82350
SI4542DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC 0 2,500:$0.79110
SI4966DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8SOIC 0 2,500:$0.77625
SQJ941EP-T1-GE3 Vishay Siliconix MOSFET DUAL P-CH 30V PPAK 8SOIC 0 3,000:$0.76950
SI4388DY-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 30V 8-SOIC 0 2,500:$0.76950
SI6975DQ-T1-GE3 Vishay Siliconix MOSFET P-CH DUAL G-S 12V 8TSSOP 0 3,000:$0.74250
SI6973DQ-T1-GE3 Vishay Siliconix MOSFET P-CH DUAL G-S 20V 8TSSOP 0 3,000:$0.74250
SI4814BDY-T1-GE3 Vishay Siliconix MOSFET N-CH/SCHOTTKY 30V 8SOIC 0 2,500:$0.71550
SI4967DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 8SOIC 0 2,500:$0.71145
SI4965DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 8SOIC 0 2,500:$0.69390
SI7980DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK 8SOIC 0 3,000:$0.68850
SI4944DY-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V 8-SOIC 0 2,500:$0.67905
SI4569DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 8-SOIC 0 2,500:$0.67905
SI7904DN-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH D-S 20V 1212-8 0 3,000:$0.67200
SI7214DN-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH D-S 30V 1212-8 0 3,000:$0.67200
SI7228DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V PWRPAK 1212-8 0 3,000:$0.61600
SIZ720DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 0 3,000:$0.60900
SIZ710DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 5 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SIZ710DT-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V POWERPAIR 5 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SI5903DC-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: 2 個(gè) P 溝道(雙)
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 2.1A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 155 毫歐 @ 2.1A,4.5V
Id 時(shí)的 Vgs(th)(最大): 600mV @ 250µA
閘電荷(Qg) @ Vgs: 6nC @ 4.5V
輸入電容 (Ciss) @ Vds: -
功率 - 最大: 1.1W
安裝類型: 表面貼裝
封裝/外殼: 8-SMD,扁平引線
供應(yīng)商設(shè)備封裝: 1206-8 ChipFET?
包裝: 帶卷 (TR)