分離式半導(dǎo)體產(chǎn)品 SI7222DN-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI7222DN-T1-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 0 3,000:$0.76950
6,000:$0.74100
15,000:$0.71250
30,000:$0.69825
75,000:$0.68400
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 0 3,000:$0.56000
6,000:$0.53200
15,000:$0.51000
30,000:$0.49600
75,000:$0.48000
SI7222DN-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: 2 個(gè) N 溝道（雙）
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 40V
電流 - 連續(xù)漏極(Id) @ 25° C: 6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 42 毫歐 @ 5.7A，10V
Id 時(shí)的 Vgs(th)（最大）: 1.6V @ 250µA
閘電荷(Qg) @ Vgs: 29nC @ 10V
輸入電容 (Ciss) @ Vds: 700pF @ 20V
功率 - 最大: 17.8W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? 1212-8 雙
供應(yīng)商設(shè)備封裝: PowerPAK? 1212-8 Dual
包裝: 帶卷 (TR)