| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI4948BEY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 60V 8-SOIC | 2,500 | 2,500:$0.53200 5,000:$0.50540 12,500:$0.48450 25,000:$0.47120 62,500:$0.45600 |
| SI4948BEY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 60V 8-SOIC | 5,009 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| SI4948BEY-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 60V 8-SOIC | 5,009 | 1:$1.44000 25:$1.14000 100:$1.02600 250:$0.89300 500:$0.79800 1,000:$0.62700 |
| SI4564DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 10A/9.2A 8SOIC | 2,500 | 2,500:$0.56000 5,000:$0.53200 12,500:$0.51000 25,000:$0.49600 62,500:$0.48000 |
| SI1551DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 0 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| SI3932DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6-TSOP | 1,901 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI3932DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 6-TSOP | 1,901 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI4511DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH D-S 20V 8-SOIC | 2,500 | 2,500:$0.67200 5,000:$0.63840 12,500:$0.61200 25,000:$0.59520 62,500:$0.57600 |
| SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 14,229 | 1:$1.86000 25:$1.43120 100:$1.29850 250:$1.16600 500:$1.00700 1,000:$0.84800 |
| SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 14,229 | 1:$1.86000 25:$1.43120 100:$1.29850 250:$1.16600 500:$1.00700 1,000:$0.84800 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | 2 個 P 溝道（雙） |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 2.4A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 120 毫歐 @ 3.1A，10V |
| Id 時的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 22nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.4W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |