| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1965DH-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 12V 1.3A SC70-6 | 0 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| SI1539DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 5,850 | 1:$0.63000 25:$0.44280 100:$0.37950 250:$0.32776 500:$0.28176 1,000:$0.21850 |
| SI1539DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 5,850 | 1:$0.63000 25:$0.44280 100:$0.37950 250:$0.32776 500:$0.28176 1,000:$0.21850 |
| SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1206-8 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1206-8 | 2,237 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SIA533EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 12V 4.5A SC70-6 | 3,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIS902DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 1212-8 PPAK | 6,745 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SI7232DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 1212-8 PPAK | 3,000 | 3,000:$0.33350 6,000:$0.31050 15,000:$0.29900 30,000:$0.28750 75,000:$0.28290 150,000:$0.27600 |
| SI4228DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.35000 5,000:$0.33250 12,500:$0.31875 25,000:$0.31000 62,500:$0.30000 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) P 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.3A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 390 毫歐 @ 1A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 4.2nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 120pF @ 6V |
| 功率 - 最大: | 1.25W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應(yīng)商設(shè)備封裝: | SC-70-6 |
| 包裝: | 帶卷 (TR) |