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參數(shù)資料
| 型號： | E28F002BL-B150 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 150 ns, PDSO40 |
| 封裝： | 20 X 10 MM, TSOP-40 |
| 文件頁數(shù)： | 6/37頁 |
| 文件大?。?/td> | 455K |
| 代理商： | E28F002BL-B150 |
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
6
PRELIMINARY
Pentium
Processor
100/90 MHz
Cache
Main
Memory
82430FX
PCIset
(82437FX)
82430FX
PCIset
(82371FB)
Host
Bus
PCI
Bus
ISA
Bus
X-Bus
7 B
4 U
S F
2 F
4 E
5 R
X
M
E
M
R
#
X
M
E
M
W
#
PWROK
Vpp
J1
XDIRXOE#
Intel
28F002BC
WE#
A[16:0]
CE#
OE#
RP#
DQ[7:0]
0578_01
Figure 1
. 28F002BC-T Interface to a Pentium Microprocessor System
I
PP
, the maximum program current, is 20 mA. The
V
PP
voltage for erase and program is 11.4V to
12.6V (V
PP
= 12V ± 5%) under all operating
conditions. Typical I
CC
active current is 20 mA.
The 28F002BC flash memory is also designed with
a standby mode to minimize system current drain
and allow for low-power designs. When the CE#
and RP# pins are at V
, the CMOS standby mode
is enabled and I
CC
drops to about 50 μA.
A deep power-down mode is enabled when the RP#
pin is at ground. In addition to minimizing power
consumption, the deep power-down mode also
provides
write
protection
conditions. I
current during deep power-down
mode is 0.20 μA typical. An initial maximum access
time or reset time of 300 ns is required from RP#
switching high until outputs are valid. Equivalently,
the device has a maximum wake-up time of 215 ns
until writes to the CUI are recognized.
during
power-up
When RP# is at ground, the WSM is reset, the
status register is cleared, and the entire device is
write-protected.
This
feature
corruption and protects the code stored in the
device during system reset. The system Reset pin
can be tied to RP# to reset the memory to read
mode at power-up. With on-chip program/erase
prevents
data
automation
protection,
unwanted program and/or erase cycles, even
during system reset.
and
the
RP#
device
functionality
is
protected
for
data
against
1.3
Applications
2-Mbit Boot Block flash memory combines high
density, high performance, and cost-effective flash
memory with blocking and hardware protection
capabilities. Its flexibility and versatility reduces
cost throughout the product life cycle. Flash
memory is ideal for Just-In-Time production flow,
reducing
system
inventory
eliminating
component
production phase. During a product’s life cycle,
flash memory reduces costs by allowing user-
performed code updates and feature enhancements
via floppy disk or remote link.
and
costs,
during
and
the
handling
The 28F002BC is a full-function blocked flash
product suitable for a wide range of applications,
including extended PC BIOS, digital cellular phone
program and data storage, telecommunication
boot/firmware, and various embedded applications
where both program and data storage are required.
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PDF描述 |
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| E28F002BVT80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F002BL-T150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BVB120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BVB60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BVB80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BVT120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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