參數(shù)資料
型號(hào): E28F002BVB120
廠商: Intel Corp.
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage啟動(dòng)塊閃存系列
文件頁數(shù): 34/37頁
文件大小: 455K
代理商: E28F002BVB120
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
34
PRELIMINARY
ADDRESSES (A)
WE# (E)
OE# (G)
CE# (W)
DATA (D/Q)
RP# (P)
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
HH
V
V
6.5V
IL
V
IN
D
IN
A
IN
A
AVAV
t
IN
D
Valid
SRD
IN
D
QVPH
t
PHHEH
t
High Z
EHDX
t
V
IL
V
V (V)
1
2
3
4
6
5
EHAX
t
EHQV1,2,3,4
t
EHEL
t
EHWH
t
ELEH
t
t
DVEH
VPEH
t
QVVL
t
PHWL
t
WLEL
t
AVEH
t
PPLK
V
PPH
V
1
2
PPH
V
IL
V
IH
V
IL
V
IH
WP#
0578_13
NOTES:
1.
2.
3.
4.
5.
6.
V
CC
Power-Up and Standby
Write Program Setup or Erase Setup Command
Write Valid Address and Data (Program or Erase Confirm Command
Automated Program or Erase Delay
Read Status Register Data
Write Read Array Command
Figure 14. Alternate AC Waveforms for Write and Erase Operations (CE#
—Controlled Writes)
Table 11. Erase and Program Timings (T
A
= +25°C)
V
PP
= 12V ± 10%
2
V
PP
= 12V ± 5%
Parameter
1
V
CC
= 5V ± 10%
V
CC
= 5V ± 10%
Units
Typ
Max
Typ
Max
Boot/Parameter Block Erase Time
5.8
40
1.0
7
s
Main Block Erase Time
14
60
2.4
14
s
Main Block Write Time
6.0
20
1.2
4.2
s
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Erase times near max limits when the 10% V
PP
option is used.
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