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參數(shù)資料
| 型號： | E28F002BVT60 |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 2兆位SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 28/37頁 |
| 文件大?。?/td> | 455K |
| 代理商： | E28F002BVT60 |
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
28
PRELIMINARY
Table 7. DC Characteristics
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
I
RP#
RP# Boot Block Unlock
Current
A
9
Intelligent Identifier
Current
A
9
Intelligent Identifier
Voltage
Input Low Voltage
1,4
500
μA
RP# = V
HH
I
ID
1,4
500
μA
A
9
= V
ID
V
ID
10.8
13.2
V
V
IL
-0.5
V
CC
+
0.5V
0.45
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
CC
= V
CC
Min
I
OH
= –1.5 mA
V
CC
= V
CC
Min
I
OH
= –100
μ
A
Complete Write
Protection
V
OH
Output High Voltage
(TTL)
2.4
V
Output High Voltage
(CMOS)
0.85
V
CC
V
V
CC
–
0.4V
V
PPLK
V
PP
Lock-Out Voltage
3
0.0
6.5
V
V
PPH
V
PP
(Program/
Erase Operations)
V
PP
(Program/
Erase Operations)
V
CC
Erase/Write Lock
Voltage
RP# Unlock Voltage
7
11.4
12.0
12.6
V
V
PPH
8
10.8
12.0
13.2
V
V
LKO
2.0
V
V
HH
8
10.8
12.0
13.2
V
Boot Block Unlock
Voltage
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, V
PP
=12.0V , T = +25°C. These currents are
valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
3. Block erases and byte writes are inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between V
PPH
and V
PPLK
.
4. Sampled, not 100% tested.
5. CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
6. V
CC
= 12.0V ± 10% for applications requiring 100,000 block erase cycles.
7. V
PP
= 12.0V ± 5% for applications requiring 100,000 block erase cycles.
8.
V
= 12.0V ± 10% for applications requiring wider V
tolerances: Parameter blocks can sustain 10,000 block erase
cycles; main blocks support up to 100 block erase cycles. Note that erase times are close to maximum spec limits when
using this option.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F002BVT80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BX-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| E28F002BX-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| E28F002BX-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F002BX-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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