參數(shù)資料
型號: E28F002BX-T80
廠商: INTEL CORP
元件分類: PROM
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 8 FLASH 12V PROM, 80 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁數(shù): 29/37頁
文件大小: 455K
代理商: E28F002BX-T80
E
4.2.4
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
29
PRELIMINARY
AC CHARACTERISTICS
Table 8. AC Characteristics: Read Only Operations
28F002BC-80
28F002BC-120
Symbol
Parameter
Notes
V
CC
= 5V ± 10%
100 pF
V
CC
= 5V ± 10%
100 pF
Units
Min
Max
Min
Max
t
AVAV
Read Cycle Time
80
120
ns
t
AVQV
Address to Output Delay
80
120
ns
t
ELQV
CE# to Output Delay
2
80
120
ns
t
PHQV
RP# to Output Delay
300
300
ns
t
GLQV
OE# to Output Delay
2
40
40
ns
t
ELQX
CE# to Output in Low Z
3
0
0
ns
t
EHQZ
CE# to Output in High Z
3
30
30
ns
t
GLQX
OE# to Output in Low Z
3
0
0
ns
t
GHQZ
OE# to Output in High Z
3
30
30
ns
t
OH
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First
3
0
0
ns
NOTES:
1.
2.
3.
4.
See AC Input/Output Reference Waveform for timing measurements.
OE# may be delayed up to t
CE
—t
OE
after the falling edge of CE# without impact on t
CE
.
Sampled, but not 100% tested.
See Standard Test Configuration (Figure 11).
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