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參數(shù)資料
| 型號： | E28F004BL-B150 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 |
| 封裝： | 10 X 20 MM, TSOP-40 |
| 文件頁數(shù)： | 16/50頁 |
| 文件大?。?/td> | 559K |
| 代理商： | E28F004BL-B150 |
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28F400BX-T/B, 28F004BX-T/B
3.1.2.2 28F004BX-T Memory Map
The 28F004BX-T device has the 16-Kbyte boot
block located from 7C000H to 7FFFFH to accom-
modate those microprocessors that boot from the
top of the address map. In the 28F004BX-T the first
8-Kbyte parameter block resides in memory space
from 7A000H to 7BFFFH. The second 8-Kbyte pa-
rameter block resides in memory space from
78000H to 79FFFH. The 96-Kbyte main block re-
sides in memory space from 60000H to 77FFFH.
The three 128-Kbyte main blocks reside in memory
space from 40000H to 5FFFFH, 20000H to 3FFFFH
and 00000H to 1FFFFH.
7FFFFH
16-Kbyte BOOT BLOCK
7BFFFH
7C000H
8-Kbyte PARAMETER BLOCK
79FFFH
7A000H
8-Kbyte PARAMETER BLOCK
77FFFH
78000H
96-Kbyte MAIN BLOCK
5FFFFH
60000H
128-Kbyte MAIN BLOCK
3FFFFH
40000H
128-Kbyte MAIN BLOCK
1FFFFH
20000H
128-Kbyte MAIN BLOCK
00000H
Figure 11. 28F004BX-T Memory Map
4.0
PRODUCT FAMILY PRINCIPLES
OF OPERATION
Flash memory augments EPROM functionality with
in-circuit electrical write and erase. The 4-Mbit flash
family utilizes a Command User Interface (CUI) and
internally generated and timed algorithms to simplify
write and erase operations.
The CUI allows for 100% TTL-level control inputs,
fixed power supplies during erasure and program-
ming, and maximum EPROM compatibility.
In the absence of high voltage on the V
PP
pin, the
4-Mbit boot block flash family will only successfully
execute the following commands: Read Array, Read
Status Register, Clear Status Register and Intelli-
gent Identifier mode. The device provides standard
EPROM read, standby and output disable opera-
tions. Manufacturer Identification and Device Identi-
fication data can be accessed through the CUI or
through the standard EPROM A
9
high voltage ac-
cess (V
ID
) for PROM programming equipment.
The same EPROM read, standby and output disable
functions are available when high voltage is applied
to the V
PP
pin. In addition, high voltage on V
PP
al-
lows write and erase of the device. All functions as-
sociated with altering memory contents: write and
erase, Intelligent Identifier read and Read Status are
accessed via the CUI.
The purpose of the Write State Machine (WSM) is to
completely automate the write and erasure of the
device. The WSM will begin operation upon receipt
of a signal from the CUI and will report status back
through a Status Register. The CUI will handle the
WE
Y
interface to the data and address latches, as
well as system software requests for status while the
WSM is in operation.
4.1 28F400BX Bus Operations
Flash memory reads, erases and writes in-system
via the local CPU. All bus cycles to or from the flash
memory conform to standard microprocessor bus
cycles.
16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F004BL-T150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BVB120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BVB60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BVB80 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述: |
| E28F004BVT120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |