參數(shù)資料
型號(hào)： E28F004S3-120
廠商： INTEL CORP
元件分類： PROM
英文描述： BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述： 512K X 8 FLASH 2.7V PROM, 120 ns, PDSO40
封裝： 10 X 20 MM, TSOP-40
文件頁(yè)數(shù)： 50/50頁(yè)
文件大小： 559K
代理商： E28F004S3-120
28F400BX-T/B, 28F004BX-T/B
ADDITIONAL INFORMATION
References
Order Number
Document
290448
28F002/200BX-T/B 2-Mbit Boot Block Flash Memory Datasheet
290449
28F002/200BL-T/B 2-Mbit Low Power Boot Block Flash Memory Datasheet
290450
28F004/400BL-T/B 4-Mbit Low Power Boot Block Flash Memory Datasheet
290531
2-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
290530
4-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
290539
8-Mbit SmartVoltage Boot Block Flash Memory Family Datasheet
292098
AP-363 ‘‘Extended Flash BIOS Concepts for Portable Computers’’
292148
AP-604 ‘‘Using Intel’s Boot Block Flash Memory Parameter Blocks to Replace
EEPROM’’
292178
AP-623 ‘‘Multi-Site Layout Planning Using Intel’s Boot Block Flash Memory’’
292130
AB-57 ‘‘Boot Block Architecture for Safe Firmware Updates’’
292154
AB-60 ‘‘2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family’’
Revision History
Number
Description
-001
Original Version
-002
Removed -70 speed bin.
Integrated -70 characteristics into -60 speed bin.
Added Extended Temperature characteristics.
Modified BYTE
Y
Timing Diagram.
-003
PWD renamed to RP
Y
for JEDEC standardization compatibility.
Combined V
CC
Read current for 28F400BX Word-Wide Mode and Byte-Wide Mode and
28F004BX Byte-Wide Mode in DC Characteristics tables.
Added Boot Black Unlock Current specifications in DC Characteristics tables.
Improved I
CCR
and I
CCW
in DC Characteristics: Extended Temperature Operation table.
Improved t
AVAV
, t
AVQV
, t
ELQV
, t
GLQV
, t
EHQZ
, t
GHQZ
, t
FHQV
and t
FLQZ
specifications for
Extended Temperature Operations AC CharacteristicsDRead and Write Operations.
-004
Added specifications for 120 ns access time product version; 28F400BX-120 and
28F004BX-120.
Included permanent change on write timing parameters for -80 ns product versions. Write
pulse width (t
WP
and t
CP
) increases from 50 ns to 60 ns. Write pulse width high (t
WPH
and
t
CPH
) decreases from 30 ns to 20 ns. Total write cycle time (t
WC
) remains unchanged.
Added I
CCR
test condition note for typical frequency value in DC Characteristics table.
Added I
OH
CMOS specification.
Added 28F400BX interface to Intel386
TM
EX Embedded Processor block diagram.
Added description of how to design for upgrading to SmartVoltage Boot Block products.
-005
Added references to input rise/fall times.
50
相關(guān)PDF資料
PDF描述
E28F004S3-150 BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F004S5-120 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F004S5-85 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F004BVT120 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F010-120 1024K (128K x 8) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F004S3-150 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP
E28F004S5120 制造商:Intel 功能描述:
E28F004S5-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
E28F004S585 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述:
E28F004S5-85 制造商:Intel 功能描述:NOR Flash, 512K x 8, 40 Pin, Plastic, TSSOP
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