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參數(shù)資料
| 型號(hào)： | E28F200BL-B150 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | Metal Strip Resistor; Series:WSR; Resistance:0.15ohm; Resistance Tolerance:+/- 1 %; Power Rating:2W; Temperature Coefficient:+/-75 ppm; Package/Case:4527; Terminal Type:PCB Surface Mount; Leaded Process Compatible:Yes |
| 中文描述： | 128K X 16 FLASH 12V PROM, 150 ns, PDSO56 |
| 封裝： | 20 X 14 MM, TSOP-56 |
| 文件頁(yè)數(shù)： | 16/55頁(yè) |
| 文件大?。?/td> | 636K |
| 代理商： | E28F200BL-B150 |
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
16
SEE NEW DESIGN RECOMMENDATIONS
Table 3. Bus Operations for Word-Wide Mode (BYTE# = V
IH
)
Mode
Notes
RP#
CE#
OE#
WE#
A
9
A
0
V
PP
DQ
0
–15
Read
1,2,3
V
IH
V
IL
V
IL
V
IH
X
X
X
D
OUT
Output Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
High Z
Standby
V
IH
V
IH
X
X
X
X
X
High Z
Deep Power-Down
9
V
IL
X
X
X
X
X
X
High Z
Intelligent Identifier
(Mfr)
4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
0089 H
Intelligent Identifier
(Device)
4,5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
See
Table 5
Write
6,7,8
V
IH
V
IL
V
IH
V
IL
X
X
X
D
IN
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = V
IL
)
Mode
Notes
RP#
CE#
OE#
WE#
A
9
A
0
A
–1
V
PP
DQ
0–7
DQ
8–14
Read
1,2,3
V
IH
V
IL
V
IL
V
IH
X
X
X
X
D
OUT
High Z
Output
Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
X
High Z
High Z
Standby
V
IH
V
IH
X
X
X
X
X
X
High Z
High Z
Deep Power-
Down
9
V
IL
X
X
X
X
X
X
X
High Z
High Z
Intelligent
Identifier (Mfr)
4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
X
89H
High Z
Intelligent
Identifier
(Device)
4,5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
X
See
Table
5
High Z
Write
6,7,8
V
IH
V
IL
V
IH
V
IL
X
X
X
X
D
IN
High Z
NOTES:
1. Refer to DC Characteristics
2. X can be V
IL
, V
IH
for control pins and addresses, V
PPLK
or V
PPH
for V
PP
.
3. See DC Characteristicsfor V
PPLK
, V
PPH1
, V
PPH2
, V
HH
, V
ID
voltages.
4. Manufacturer and device codes may also be accessed via a CUI write sequence, A
1
–A
16
= X, A
1
–A
17
= X.
5. See Table 5 for device IDs.
6. Refer to Table 7 for valid D
IN
during a write operation.
7. Command writes for block erase or word/byte program are only executed when V
PP
= V
PPH1
or V
PPH2
.
8. To program or erase the boot block, hold RP# at V
HH
or WP# at V
IH
. See Section 3.4.
9. RP# must be at GND ± 0.2 V
to meet the maximum deep power-down current specified.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F200BL-T150 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BVB60 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BV-B60 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BVB80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BV-B80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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