參數(shù)資料
型號： EBJ21UE8BFU0-DJ-F
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M X 64 DDR DRAM MODULE, ZMA204
封裝： HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204
文件頁數(shù)： 12/16頁
文件大小： 240K
代理商： EBJ21UE8BFU0-DJ-F
EBJ21UE8BFU0
Data Sheet E1642E30 (Ver. 3.0)
5
Serial PD Matrix
-DJ
-GN
-GL
Byte No. Function described
Hex Comments
0
Number of serial PD bytes written/
SPD device size/CRC coverage
92h 176/256/0-116
1
SPD revision
10h Rev.1.0
2
Key byte/DRAM device type
0Bh DDR3 SDRAM
3
Key byte/module type
03h SO-DIMM
4
SDRAM density and banks
02h 1G bits, 8 banks
5
SDRAM addressing
11h
14 rows,
10 columns
11h
14 rows,
10 columns
11h
14 rows,
10 columns
6
Module nominal voltage, VDD
00h 1.5V
7
Module organization
09h 2 ranks/
×8 bits
09h 2 ranks/
×8 bits
09h 2 ranks/
×8 bits
8
Module memory bus width
03h 64 bits/non-ECC
9
Fine timebase (FTB)
dividend/divisor
52h 5/2
10
Medium timebase (MTB) dividend
01h 1
11
Medium timebase (MTB) divisor
08h 8
12
SDRAM minimum cycle time
(tCK (min.))
0Ch 1.5ns
0Ah 1.25ns
13
Reserved
00h —
14
SDRAM CAS latencies supported, LSB7Eh 5, 6, 7, 8, 9, 10
FEh 5, 6, 7, 8, 9, 10, 11 FEh 5, 6, 7, 8, 9, 10, 11
15
SDRAM CAS latencies supported,
MSB
00h —
16
SDRAM minimum CAS latencies
time (tAA (min.))
69h 13.125ns
64h 12.5ns
17
SDRAM minimum write recovery
time (tWR (min.))
78h 15ns
18
SDRAM minimum /RAS to /CAS
delay (tRCD (min.))
69h 13.125ns
64h 12.5ns
19
SDRAM minimum row active to row
active delay (tRRD (min.))
30h 6ns
20
SDRAM minimum row precharge
time (tRP (min.))
69h 13.125ns
64h 12.5ns
21
SDRAM upper nibbles for tRAS and
tRC
11h —
22
SDRAM minimum active to
precharge time (tRAS (min.)), LSB
20h 36ns
18h 35ns
23
SDRAM minimum active to active
/auto-refresh time (tRC (min.)), LSB
89h 49.125ns
81h 48.125ns
7Ch 47.5ns
24
SDRAM minimum refresh recovery
time delay (tRFC (min.)), LSB
70h 110ns
25
SDRAM minimum refresh recovery
time delay (tRFC (min.)), MSB
03h 110ns
26
SDRAM minimum internal write to
read command delay (tWTR (min.))
3Ch 7.5ns
27
SDRAM minimum internal read to
precharge command delay
(tRTP (min.))
3Ch 7.5ns
28
Upper nibble for tFAW
00h 30ns
29
Minimum four activate window delay
time (tFAW (min.))
F0h 30ns
30
SDRAM optional features
83h DLL-off, RZQ/6, 7
31
SDRAM thermal and refresh options
81h
PASR/2X refresh at
+85C to +95C
81h
PASR/2X refresh at
+85C to +95C
81h
PASR/2X refresh at
+85C to +95C
相關PDF資料
PDF描述
EBJ41UF8BAS0-GN-F 1G X 64 DDR DRAM MODULE, ZMA204
EC11.0001.001 Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired
EC11.0001.201 Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired
EC11.0001.301 Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired
EC11.0001.401 Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 20A; Terminal Type: Quick Connect Tabs; Appliance inlet with line switch; 2-pole; single elements are already wired
相關代理商/技術參數(shù)
參數(shù)描述
EBJ21UE8BFU0-GL-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB DDR3 SDRAM SO-DIMM
EBJ21UE8BFU0-GN-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB DDR3 SDRAM SO-DIMM
EBJ21UE8BFU1 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB DDR3 SDRAM SO-DIMM
EBJ21UE8BFU1-DJ-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2GB DDR3 SDRAM SO-DIMM
EBJ24A 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:EURO BLOCKS TS & EB SERIES
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