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參數(shù)資料
| 型號： | EC3H04C |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Frequency Low-Noise Amplifier and OSC Applications |
| 中文描述： | 高頻低噪聲放大器和OSC應(yīng)用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | EC3H04C |
EC3H04C
No.6580-1/6
High-Frequency Low-Noise Amplifier
and OSC Applications
Features
Low noise : NF=1.7dB typ (f=2GHz).
Hige cut-off frequency : fT=8GHz typ (VCE=1V).
Low operating voltage.
Ultraminiature (1008 size) and thin (0.6mm) leadless
package.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
9
6
2
100
100
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
ICBO
IEBO
hFE
fT
Cob
Cre
S21e
2
1
S21e
2
2
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=10mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=10mA, f=2GHz
VCE=3V, IC=20mA, f=1GHz
VCE=1V, IC=10mA, f=2GHz
1.0
10
180
μ
A
μ
A
100
6
8
GHz
pF
pF
dB
dB
dB
1.1
0.85
1.5
Forward Transfer Gain
4
5
12
1.7
Noise Figure
2.5
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6580
EC3H04C
Package Dimensions
unit : mm
2184
[EC3H04C]
72100 TS IM TA-2738
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
2
1
3
4
0.5
0.2
0.2
0
0
0
0.05
0
0
0.05
0.8
1
0
(Bottom View)
1 : Base
2 : Emitter
3 : Collector
4 : Collector
SANYO : E-CSP1008-4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EC3H05B | VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H06B | UHF to S Band Low-Noise Amplifier and OSC Applications |
| EC3H07B | UHF to S Band Low-Noise Amplifier and OSC Applications |
| EC4201KF | NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications |
| EC4307KF | EC4307KF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EC3H05B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| EC3H06B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to S Band Low-Noise Amplifier and OSC Applications |
| EC3H07B | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to S Band Low-Noise Amplifier and OSC Applications |
| EC3H07BA | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to S Band Low-Noise Amplifier and OSC Applications |
| EC3H07B-TL | 制造商:ON Semiconductor 功能描述: |
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