參數(shù)資料
型號: ED1802
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP general purpose transistor
中文描述: 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 3/8頁
文件大?。?/td> 42K
代理商: ED1802
1999 Apr 27
3
Philips Semiconductors
Product specification
PNP general purpose transistor
ED1802
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
5
500
476
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
20 V
I
E
= 0; V
CB
=
20 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
500 mA; V
CE
=
1 V
I
C
=
100 mA; V
CE
=
1 V
I
C
=
100 mA; V
CE
=
1 V
40
106
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
h
FE
DC current gain
ED1802K
ED1802L
ED1802M
ED1802N
ED1802P
collector-emitter saturation voltage
collector capacitance
transition frequency
106
132
170
213
333
150
189
233
300
476
700
15
V
CEsat
C
c
f
T
I
C
=
500 mA; I
B
=
50 mA; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 80
mV
pF
MHz
相關(guān)PDF資料
PDF描述
ED1802K Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to +105 C; Capacitance:680uF RoHS Compliant: Yes
ED1802L PNP general purpose transistor
ED1802M PNP general purpose transistor
ED1802N PNP general purpose transistor
ED1802P PNP general purpose transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ED1802K 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor
ED1802L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor
ED1802M 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor
ED1802N 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor
ED1802P 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor