參數(shù)資料
型號(hào)： EDE1116ABSE-6E-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 1G bits DDR2 SDRAM
中文描述： 64M X 16 DDR DRAM, 0.45 ns, PBGA92
封裝： ROHS COMPLIANT, FBGA-92
文件頁(yè)數(shù)： 52/82頁(yè)
文件大小： 618K
代理商： EDE1116ABSE-6E-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
52
Bank Activate Command [ACT]
The bank activate command is issued by holding /CAS and /WE high with /CS and /RAS low at the rising edge of the
clock. The bank addresses BA0, BA1 and BA2 are used to select the desired bank. The row address A0 through
A13 is used to determine which row to activate in the selected bank. The Bank activate command must be applied
before any read or write operation can be executed. Immediately after the bank active command, the DDR2 SDRAM
can accept a read or write command on the following clock cycle. If a R/W command is issued to a bank that has
not satisfied the tRCD (min.) specification, then additive latency must be programmed into the device to delay when
the R/W command is internally issued to the device. The additive latency value must be chosen to assure tRCD
(min.) is satisfied. Additive latencies of 0, 1, 2, 3 and 4 are supported. Once a bank has been activated it must be
precharged before another bank activate command can be applied to the same bank. The bank active and
precharge times are defined as tRAS and tRP, respectively. The minimum time interval between successive bank
activate commands to the same bank is determined by the /RAS cycle time of the device (tRC), which is equal to
tRAS + tRP. The minimum time interval between successive bank activate commands to the different bank is
determined by (tRRD).
In order to ensure that 8-bank devices do not exceed the instantaneous current supplying capability of 4-bank
devices, a restriction on the number of sequential ACT commands that can be issued must be observed. The rule is
as follows:
Note: 8-bank device sequential bank activation restriction: No more than 4 banks may be activated in a rolling
tFAW window. Converting to clocks is done by dividing tFAW (ns) by tCK (ns) and rounding up to next
integer value. As an example of the rolling window, if (tFAW/tCK) rounds up to 10 clocks, and an activate
command is issued in clock N, no more than three further activate commands may be issued in clock N+1
through N+9.
/CK
CK
Address
Command
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
tRCD(min.)
tRAS
tRP
tRC
ROW: 0
ACT
Bank0
Active
Bank Activate Command Cycle (tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2)
Bank1
Active
Bank0
Active
Bank0
Precharge
Bank1
Precharge
Posted
READ
Posted
READ
ACT
PRE
PRE
ACT
COL: 0
ROW: 0
ROW: 1
COL: 1
tCCD
Additive latency (AL)
tRRD
Bank0 Read begins
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1116ACBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACBG-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACBG-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
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