參數(shù)資料
型號: EDE2508ABSE-6E-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M bits DDR2 SDRAM
中文描述: 32M X 8 DDR DRAM, 0.45 ns, PBGA60
封裝: ROHS COMPLIANT, FBGA-60
文件頁數(shù): 33/66頁
文件大小: 708K
代理商: EDE2508ABSE-6E-E
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
33
ODT(On Die Termination)
On Die Termination (ODT), is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQS,
/DQS, RDQS, /RDQS, and DM signal for
×
8 configurations via the ODT control pin. For
×
16 configuration ODT is
applied to each DQ, UDQS, /UDQS, LDQS, /LDQS, UDM, and LDM signal via the ODT control pin. The ODT
feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to
independently turn on/off termination resistance for any or all DRAM devices.
The ODT function is turned off and not supported in self-refresh mode.
Switch sw1, sw2 or sw3 is enabled by ODT pin.
Selection between sw1, sw2 or sw3 is determined by Rtt (nominal) in EMRS
Termination included on all DQs, DM, DQS, /DQS, RDQS and /RDQS pins.
Target Rtt (
) = (Rval1) / 2, (Rval2) / 2 or (Rval3) / 2
DRAM
input
buffer
VDDQ
VSSQ
sw1
sw1
sw2
Rval1
Rval1
Input
Pin
VDDQ
VSSQ
sw2
Rval2
Rval2
sw3
VDDQ
VSSQ
sw3
Rval3
Rval3
Functional Representation of ODT
相關(guān)PDF資料
PDF描述
EDE2516ABSE-6E-E 256M bits DDR2 SDRAM
EDE2508ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ABSE-GE-E 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE 256M bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2508ABSE-GE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ABSE-GE-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ACSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2508ACSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2508ACSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM