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參數(shù)資料
| 型號： | EDE2516ABSE-5C-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256M bits DDR2 SDRAM |
| 中文描述： | 16M X 16 DDR DRAM, 0.5 ns, PBGA84 |
| 封裝： | ROHS COMPLIANT, FBGA-84 |
| 文件頁數(shù)： | 20/66頁 |
| 文件大?。?/td> | 708K |
| 代理商： | EDE2516ABSE-5C-E |
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EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
20
Function Truth Table
The following tables show the operations that are performed when each command is issued in each state of the
DDR SDRAM.
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Notes
Idle
H
×
×
×
×
DESL
Nop or Power down
L
H
H
H
×
NOP
Nop or Power down
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10 (AP)
PRE
Precharge
L
L
H
L
A10 (AP)
PALL
Precharge all banks
L
L
L
H
×
REF
Auto refresh
2
L
L
L
H
×
SELF
Self refresh
2
L
L
L
L
BA, MRS-OPCODE
MRS
Mode register accessing
2
L
L
L
L
BA, EMRS-OPCODE
EMRS
Extended mode register accessing
2
Bank(s) active
H
×
×
×
×
DESL
Nop
L
H
H
H
×
NOP
Nop
L
H
L
H
BA, CA, A10 (AP)
READ
Begin Read
L
H
L
H
BA, CA, A10 (AP)
READA
Begin Read
L
H
L
L
BA, CA, A10 (AP)
WRIT
Begin Write
L
H
L
L
BA, CA, A10 (AP)
WRITA
Begin Write
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
Precharge
L
L
H
L
A10 (AP)
PALL
Precharge all banks
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Read
H
×
×
×
×
DESL
Continue burst to end -> Row active
L
H
H
H
×
NOP
Continue burst to end -> Row active
L
H
L
H
BA, CA, A10 (AP)
READ
Burst interrupt
1, 4
L
H
L
H
BA, CA, A10 (AP)
READA
Burst interrupt
1, 4
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE2508ABSE-6C-E | 256M bits DDR2 SDRAM |
| EDE2516ABSE-6C-E | 256M bits DDR2 SDRAM |
| EDE2508ABSE-6E-E | 256M bits DDR2 SDRAM |
| EDE2516ABSE-6E-E | 256M bits DDR2 SDRAM |
| EDE2508ABSE-GE | 256M bits DDR2 SDRAM for HYPER DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE2516ABSE-6C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2516ABSE-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
| EDE2516ABSE-GE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2516ABSE-GE-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM |
| EDE2516ACSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM |
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