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參數(shù)資料
| 型號： | EDI488MEV6SI |
| 廠商： | ELECTRONIC DESIGNS INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 8 EDO DRAM, 60 ns, PDSO32 |
| 封裝： | PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 442K |
| 代理商： | EDI488MEV6SI |
1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
EDI488MEV-RP
FEATURES
s Access Times of 60, 70ns
s JEDEC Standard Pinout
32 pin Plastic SOJ
32 pin Plastic TSOP Type II
s 8Mx8 Organization
s Industrial and Military Temperature Ranges
s CAS-before-RAS Refresh Capability
s RAS-only and Hidden Refresh Capability
s LVTTL (3.3V) Compatible Inputs and Outputs
s +3.3V
±0.3V Power Supply
TOP VIEW
July 1999 Rev. 1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VCC
DQ0
DQ1
DQ2
DQ3
NC
VCC
WE
RAS
A0
A1
A2
A3
A4
A5
VCC
VSS
A6
A7
A8
A9
A10
A11
NC
OE
CAS
VSS
DQ4
DQ5
DQ6
DQ7
VSS
1
2
3
4
5
6
7
8
9
The EDI488MEV-RP is organized as an 8M x 8 bit Extended Data
Out (EDO) Mode CMOS DRAM. The EDO mode offers high speed
random access of memory cells within the same row.
The EDI488MEV-RP has CAS-before-RAS refresh and RAS-only
refresh and Hidden refresh capabilities.
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
PIN DESCRIPTION
I/O0-7
Data Inputs/Outputs
A0-11
Address Inputs
WE
Read/Write Enable
OE
Output Enable
CAS
Column Address Strobe
RAS
Row Address Strobe
VCC
Power (+3.3V
±10%)
VSS
Ground
NC
Not Connected
FIG. 1
PIN CONFIGURATION
8Mx8 Ruggedized Plastic 3.3V EDO DRAM
PRELIMINARY*
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDI488MEV6SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI488MEV7SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI488MEV7SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
| EDI4F3232F6M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
| EDI4F3232F7M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
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