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參數(shù)資料
| 型號(hào)： | EDI7P012FLB2602I15 |
| 廠商： | ELECTRONIC DESIGNS INC |
| 元件分類： | PROM |
| 英文描述： | 12M X 8 FLASH 5V PROM CARD, 150 ns, XMA68 |
| 封裝： | PC CARD-68 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 109K |
| 代理商： | EDI7P012FLB2602I15 |
White Electronic Designs
One Research Drive Westborough, MA 01581
http://www.whiteedc.com
PC Card Products
5
FLB series
July 28, 1999
Absolute Maximum Ratings (2)
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C **
Storage Temperature
Commercial
-30°C to +80 °C
Industrial
-40°C to +85 °C **
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V (1)
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot to -
2.0V or overshoot to V
CC +2.0V for periods less
than 20ns.
(2) Stress greater than those listed under “Absolute
Maximum ratings” may cause permanent damage
to the device. This is a stress rating only and
functional operation at these or any other conditions
greater than those indicated in the operational
sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Sym
Parameter
Density
(Mbytes)
Notes
Typ(4)
Max
Units
Test Conditions
I
CCR
V
CC Read Current
All
75
mA
V
CC = VCCmax
tcycle = 150ns,CMOS levels
I
CCW
V
CC Program Current
All
150
mA
I
CCE
V
CC Erase Current
All
150
mA
I
CCS
(CMOS)
V
CC Standby Current
2MB
(4MB)
2,3
80
230
A
V
CC = VCCmax
Control Signals = V
CC
Reset = V
SS, CMOS levels
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations
2. Control Signals: CE
1#, CE2#, OE#, WE#, REG#
3. ICCD and ICCS are specified for lowest density card for each component type (2MB for 8Mb components
and 4MB for 16Mb
components) This represents a single pair of devices. For higher densities multiply the number of device pairs by the specified current in
the table. For example a 40MB card will use 10 device pairs of 16Mb components. The maximum ICCD will be 10 x 40A = 400A. The
maximum ICCS will be 10 x 230A = 2.3mA.
4. Typical: V
CC = 5V, T = +25°C
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics(1)
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
I
LI
Input Leakage Current
1
±20
A
V
CC = VCCMAX
Vin =V
CC or VSS
I
LO
Output Leakage Current
1
±20
A
V
CC = VCCMAX
Vout =V
CC or VSS
V
IL
Input Low Voltage
1
0
0.8
V
IH
Input High Voltage
1
0.7V
CC
V
CC+0.5
V
OL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
V
OH
Output High Voltage
1
V
CC-0.4
V
CC
V
IOH = -2.0mA
V
LKO
V
CC Erase/Program
Lock Voltage
1
2.0
V
** Advanced information
Notes:
1) Values are the same for byte and word wide modes for all card densities.
2) Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150A when VIN=V
CC due to internal pull-down resistor
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