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參數(shù)資料
| 型號： | EE-SV3-D |
| 元件分類： | 開關(guān) |
| 英文描述： | 3.4 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 111K |
| 代理商： | EE-SV3-D |
114
EE-SV3 Series Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SV3 Series
■ Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■ Features
High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
Solder terminal models:
EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
PCB terminal models
EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10 μs maximum with a frequency of
100 Hz.
3.
Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No.
Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions
Tolerance
3 mm max.
±0.2
3
< mm ≤ 6
±0.24
6
< mm ≤ 10
±0.29
10
< mm ≤ 18
±0.35
18
< mm ≤ 30
±0.42
Model
Aperture (a x b)
EE-SV3(-B)
2.1 x 0.5
EE-SV3-C(S)
2.1 x 1.0
EE-SV3-D(S)
2.1 x 0.2
EE-SV3-G(S)
0.5 x 2.1
Four, 1.5
Four, 0.5
Four, R1
Four,
R1
Four, 0.25
Center mark
Cross section AA
2.54
±0.2
2.54
±0.2
Unless otherwise specified, the
tolerances are as shown below.
Two,
3.2
±0.2 dia.
holes
Two,
3.2
±0.2 dia.
holes
Item
Symbol
Rated value
Emitter
Forward current
IF
50 mA
(see note 1)
Pulse forward
current
IFP
1 A
(see note 2)
Reverse voltage
VR
4 V
Detector
Collector–Emit-
ter voltage
VCEO
30 V
Emitter–Collec-
tor voltage
VECO
---
Collector current
IC
20 mA
Collector dissipa-
tion
PC
100 mW
(see note 1)
Ambient tem-
perature
Operating
Topr
–25°C to
85°C
Storage
Tstg
–30°C to
100°C
Soldering temperature
Tsol
260°C
(see note 3)
Item
Symbol
Value
Condition
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
Emitter
Forward voltage
VF
1.2 V typ., 1.5 V max.
IF = 30 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 4 V
Peak emission wave-
length
λP
940 nm typ.
IF = 20 mA
Detector
Light current
IL
0.5 to 14 mA
1 to 28 mA
0.1 mA min.
0.5 to 14 mA
IF = 20 mA,
VCE = 10 V
Dark current
ID
2 nA typ., 200 nA max.
VCE = 10 V,
0 lx
Leakage current
ILEAK
---
Collector–Emitter satu-
rated voltage
VCE (sat)
0.1 V typ., 0.4 V max.
---
0.1 V typ.,
0.4 V max.
IF = 20 mA,
IL = 0.1 mA
Peak spectral sensitivity
wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
tr
4 μs typ.
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
Falling time
tf
4 μs typ.
Be sure to read
Precautions on page 25.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EESV3DS | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Electronic Components LLC 功能描述:SENS OPTO SLOT 3.4MM TRANS SOLDR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
| EE-SV3-DS | 功能描述:光學(xué)開關(guān)（透射型，光電晶體管輸出） PHOTO MICROSENSOR RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EESV3G | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO SLOT 3.4MM TRANS THRU 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
| EE-SV3-G | 功能描述:光學(xué)開關(guān)（透射型，光電晶體管輸出） PHOTO MICROSENSOR RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EESV3GS | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron Electronic Components LLC 功能描述:SENS OPTO SLOT 3.4MM TRANS SOLDR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
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