- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄2147 > EL2126CWZ-T7 (Intersil)IC AMP WIDEBAND LN LP SOT23-5 PDF資料下載
參數(shù)資料
| 型號(hào)： | EL2126CWZ-T7 |
| 廠商： | Intersil |
| 文件頁(yè)數(shù)： | 7/19頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC AMP WIDEBAND LN LP SOT23-5 |
| 標(biāo)準(zhǔn)包裝： | 3,000 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 150 V/µs |
| -3db帶寬： | 135MHz |
| 電流 - 輸入偏壓： | 7µA |
| 電壓 - 輸入偏移： | 500µV |
| 電流 - 電源： | 5mA |
| 電流 - 輸出 / 通道： | 220mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 30 V，±2.5 V ~ 15 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | SC-74A，SOT-753 |
| 供應(yīng)商設(shè)備封裝： | SOT-23-5 |
| 包裝： | 帶卷 (TR) |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
15
FN7046.4
May 2, 2007
Applications Information
Product Description
The EL2126 is an ultra-low noise, wideband monolithic
operational amplifier built on Elantec's proprietary high
speed complementary bipolar process. It features 1.3nV/
√Hz
input voltage noise, 200V typical offset voltage, and 73dB
THD. It is intended for use in systems such as ultrasound
imaging where very small signals are needed to be
amplified. The EL2126 also has excellent DC specifications:
200V VOS, 22A IB, 0.4A IOS, and 106dB CMRR. These
specifications allow the EL2126 to be used in DC-sensitive
applications such as difference amplifiers.
Gain-Bandwidth Product
The EL2126 has a gain-bandwidth product of 650MHz at
±5V. For gains less than 20, higher-order poles in the
amplifier's transfer function contribute to even higher closed-
loop bandwidths. For example, the EL2126 has a -3dB
bandwidth of 100MHz at a gain of 10 and decreases to
33MHz at gain of 20. It is important to note that the extra
bandwidth at lower gain does not come at the expenses of
stability. Even though the EL2126 is designed for gain
≥ 10.
With external compensation, the device can also operate at
lower gain settings. The RC network shown in Figure 50
reduces the feedback gain at high frequency and thus
maintains the amplifier stability. R values must be less than
RF divided by 9 and 1 divided by 2
πRC must be less than
200MHz.
Choice of Feedback Resistor, RF
The feedback resistor forms a pole with the input
capacitance. As this pole becomes larger, phase margin is
reduced. This increases ringing in the time domain and
peaking in the frequency domain. Therefore, RF has some
maximum value which should not be exceeded for optimum
performance. If a large value of RF must be used, a small
capacitor in the few pF range in parallel with RF can help to
reduce this ringing and peaking at the expense of reducing
the bandwidth. Frequency response curves for various RF
values are shown in the typical performance curves section
of this data sheet.
Noise Calculations
The primary application for the EL2126 is to amplify very
small signals. To maintain the proper signal-to-noise ratio, it
is essential to minimize noise contribution from the amplifier.
Figure 51 shows all the noise sources for all the components
around the amplifier.
VN is the amplifier input voltage noise
IN+ is the amplifier positive input current noise
IN- is the amplifier negative input current noise
VRX is the thermal noise associated with each resistor:
where:
k is Boltzmann's constant = 1.380658 x 10-23
T is temperature in degrees Kelvin (273 + °C)
The total noise due to the amplifier seen at the output of the
amplifier can be calculated by using the Equation 2.
As the equation shows, to keep noise at a minimum, small
resistor values should be used. At higher amplifier gain
configuration where R2 is reduced, the noise due to IN-, R2,
and R1 decreases and the noise caused by IN+, VN, and R3
starts to dominate. Because noise is summed in a root-
mean-squares method, noise sources smaller than 25% of
the largest noise source can be ignored. This can greatly
simplify the formula and make noise calculation much easier
to calculate.
-
+
RF
R
C
VIN
VOUT
FIGURE 50.
-
+
VON
VIN
IN+
IN-
R2
R3
R1
VN
VR3
VR2
VR1
FIGURE 51.
V
RX
4kTRx
=
(EQ. 1)
V
ON
BW
=
VN
2
1
R
1
R
2
-------
+
2
×
IN-
2
R
1
2
IN+
2
R
3
2
1
R
1
R
2
-------
+
2
×
+
×
4K
T
R
1
4KTR
2
R
1
R
2
-------
2
×
+
×
4KTR
3
1
R
1
R
2
-------
+
2
×
++
+
×
(EQ. 2)
EL2126
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EL2141CSZ-T13 | IC DRVR TWISTED PR 150MHZ 8-SOIC |
| EL2142CSZ-T13 | IC LINE RECEIVER DIFF 8-SOIC |
| EL2227CY-T7 | IC AMP DUAL LOW NOISE 8-MSOP |
| EL2228CYZ-T13 | IC AMP DUAL LOW NOISE 8-MSOP |
| EL2276CSZ | IC OPAMP CFA 70MHZ 1MA 14SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EL2126CWZ-T7A | 功能描述:高速運(yùn)算放大器 EL2126CWZ LW NOISE CVR A=10 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| EL21278 PC93 | 制造商:YARWAY 功能描述: |
| EL212-V | 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| EL213 | 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| EL213(TA) | 功能描述:晶體管輸出光電耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。