Absolute Maximum Ratings (TA = +25°C) Thermal Information" />
參數(shù)資料
型號(hào): EL5111IYEZ
廠商: Intersil
文件頁(yè)數(shù): 12/18頁(yè)
文件大小: 0K
描述: IC AMP SGL R-R 60MHZ 8-HMSOP
標(biāo)準(zhǔn)包裝: 50
放大器類(lèi)型: 電壓反饋
電路數(shù): 1
輸出類(lèi)型: 滿擺幅
轉(zhuǎn)換速率: 75 V/µs
增益帶寬積: 32MHz
-3db帶寬: 60MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 3000µV
電流 - 電源: 2.5mA
電流 - 輸出 / 通道: 65mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 8-VSSOP,8-MSOP(0.118",3.00mm 寬)裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 8-HMSOP
包裝: 管件
產(chǎn)品目錄頁(yè)面: 1233 (CN2011-ZH PDF)
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
3
FN7119.7
May 7, 2007
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
3
15
mV
TCVOS
Average Offset Voltage Drift (Note 1)
7
V/°C
IB
Input Bias Current
VCM = 0V
2
60
nA
RIN
Input Impedance
1
G
Ω
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
for VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V
≤ V
OUT ≤ 4.5V
62
70
dB
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
-4.92
-4.85
V
VOH
Output Swing High
IL = 5mA
4.85
4.92
V
ISC
Short-Circuit Current
±180
mA
IOUT
Output Current
±65
mA
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
60
80
dB
IS
Supply Current
No load (EL5111)
2.5
4.5
mA
No load (EL5211)
5
7.5
mA
No load (EL5411)
10
15
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V
≤ V
OUT ≤ 4.0V, 20% to 80%
75
V/s
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz (EL5211 and EL5411 only)
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.17
%
dP
Differential Phase (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.24
°
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
EL5111, EL5211, EL5411
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