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參數(shù)資料
| 型號： | EL5132ISZ-T7 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC VFA 670MHZ ULT LO VOLT 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 放大器類型： | 電壓反饋 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 1000 V/µs |
| 增益帶寬積： | 3GHz |
| -3db帶寬： | 670MHz |
| 電流 - 輸入偏壓： | 12µA |
| 電壓 - 輸入偏移： | 500µV |
| 電流 - 電源： | 11mA |
| 電流 - 輸出 / 通道： | 140mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 12 V，±2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | EL5132ISZ-T7DKR |
3
FN7382.8
May 4, 2007
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage from VS+ to VS- . . . . . . . . . . . . . . . . . . . . . . . 13.2V
Slewrate between VS+ and VS-. . . . . . . . . . . . . . . . . . . . . . . . 1V/s
IIN-, IIN+, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mA
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . -40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 500Ω, RF = 900Ω, RG = 100Ω, TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
VOS
Offset Voltage
-1
0.5
1
mV
TCVOS
Offset Voltage Temperature Coefficient
Measured from TMIN to TMAX
0.8
V/°C
IB
Input Bias Current
VIN = 0V
8
12
20
A
IOS
Input Offset Current
VIN = 0V
-1250
400
+1250
nA
TCIOS
Input Bias Current Temperature
Coefficient
Measured from TMIN to TMAX
3nA/°C
PSRR
Power Supply Rejection Ratio
VS+ = ±4.75V to ±5.25V
75
87
dB
CMRR
Common Mode Rejection Ratio
VIN = ±3.0 V
80
100
dB
CMIR
Common Mode Input Range
Guaranteed by CMRR test
±3
±3.3
V
RIN
Input Resistance
Common mode
2
5
M
Ω
CIN
Input Capacitance
2pF
IS
Supply Current
9.2
11
13
mA
AVOL
Open Loop Gain
VOUT = ±2.5V, RL = 1kΩ to GND
5
8.5
KV/V
VO
Output Voltage Swing
RF = 900Ω, RG = 100Ω, RL = 150Ω
±3.1
±3.5
V
ISC
Short Circuit Current
RL = 10Ω
70
140
mA
BW
-3dB Bandwidth
RF = 225Ω, AV = +10, RL = 1kΩ
670
MHz
BW
±0.1dB Bandwidth
RF = 225Ω, AV = +10, RL = 1kΩ
90
MHz
GBWP
Gain Bandwidth Product
3000
MHz
PM
Phase Margin
RL = 1kΩ, CL = 6pF
55
°
SR
Slew Rate
RL = 100Ω, VOUT = ±2.5V
700
1000
V/s
tR, tF
Rise Time, Fall Time
±0.1VSTEP
2.0
ns
OS
Overshoot
±0.1VSTEP
10
%
tS
0.01% Settling Time
6.6
ns
dG
Differential Gain
RF = 1kΩ, RLoad = 150Ω
0.01
%
dP
Differential Phase
RF = 1kΩ, RLoad = 150Ω
0.01
°
eN
Input Noise Voltage
f = 10kHz
0.9
nV/
√Hz
iN
Input Noise Current
f = 10kHz
3.5
pA/
√Hz
ENABLE (EL5132 Only)
tEN
Enable Time
220
nS
tDIS
Disable Time
175
nS
VIHCE
CE
Input High Voltage for Power-down
VS+ - 1
V
VILCE
CE
Input Low Voltage for Power-up
VS+ - 3
V
IS-OFF
Supply Current - Disabled
No Load, CE = 4V
13
25
A
IIL-CE
CE
Pin Input Low Current
CE
= VS--1
0
1
A
IIH-CE
CE
Pin Input High Current
CE
= VS+14
25
A
EL5132, EL5133
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