參數(shù)資料
型號: EL5134IS
廠商: Intersil
文件頁數(shù): 2/15頁
文件大?。?/td> 0K
描述: IC OP AMP LN 630MHZ 8-SOIC
標(biāo)準(zhǔn)包裝: 97
放大器類型: 電壓反饋
電路數(shù): 1
轉(zhuǎn)換速率: 475 V/µs
增益帶寬積: 1.5GHz
-3db帶寬: 650MHz
電流 - 輸入偏壓: 3.7µA
電壓 - 輸入偏移: 200µV
電流 - 電源: 6.7mA
電流 - 輸出 / 通道: 140mA
電壓 - 電源,單路/雙路(±): 5 V ~ 12 V,±2.5 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 管件
10
FN7383.4
May 4, 2007
Product Description
The EL5134, EL5135, EL5234 and EL5235 are voltage
feedback operational amplifiers designed for communication
and imaging applications requiring very low voltage and
current noise. They also feature low distortion while drawing
moderately low supply current and is built on Intersil's
proprietary high-speed complementary bipolar process. The
EL5134, EL5135, EL5234 and EL5235 use a classical
voltage-feedback topology which allows them to be used in a
variety of applications where current-feedback amplifiers are
not appropriate because of restrictions placed upon the
feedback element used with the amplifier.
Gain-Bandwidth Product and the -3dB Bandwidth
The EL5134, EL5135, EL5234 and EL5235 have a gain-
bandwidth product of 1500MHz while using only 6.7mA of
supply current per amplifier. For gains greater than 5 their
closed-loop -3dB bandwidth is approximately equal to the
gain-bandwidth product divided by the noise gain of the
circuit. For gains of 5, higher-order poles in the amplifiers'
FIGURE 35. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 36. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 37. DIFFERENTIAL GAIN (%)
FIGURE 38. DIFFERENTIAL PHASE (°)
Typical Performance Curves (Continued)
909mW
θJA=110°C/W
SO8
1.4
1.2
1
0.8
0.6
0.2
0
255075
100
150
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(
W
)
125
85
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.4
870mW
435mW
θJA=230°C/W
SOT23-5/6
θJA=115°C/W
MSOP8/10
625mW
1
0.9
0.8
0.6
0.4
0.1
0
255075
100
150
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
PATI
ON
(
W
)
125
85
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.2
0.7
0.3
0.5
391mW
θJA=265°C/W
SOT23-5/6
486mW
θJA=160°C/W
SO8
θJA=206°C/W
MSOP8/10
0.15
0
010
0.10
-0.05
0.05
-0.10
-0.15
20
30
40
50
60
70
80
90
100
DI
FFE
REN
T
IAL
GA
IN
(%
)
IRE
0.15
0
010
0.10
-0.05
0.05
-0.10
-0.15
20
30
40
50
60
70
80
90
100
DIF
F
E
R
ENTIAL
PHASE
)
IRE
-0.20
EL5134, EL5135, EL5234, EL5235
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