參數(shù)資料
型號: EL5221CWZ-T7
廠商: Intersil
文件頁數(shù): 2/13頁
文件大小: 0K
描述: IC OPAMP DUAL R-R 12MHZ SOT23-6
標(biāo)準(zhǔn)包裝: 3,000
放大器類型: 緩沖器
電路數(shù): 2
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 10 V/µs
-3db帶寬: 12MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 500µA
電流 - 輸出 / 通道: 120mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: SOT-23-6
供應(yīng)商設(shè)備封裝: SOT-23-6
包裝: 帶卷 (TR)
10
FN7187.2
July 25, 2007
more than 0.6V, electrostatic protection diodes placed in the
input stage of the device begin to conduct and overvoltage
damage could occur.
FIGURE 2. OPERATION WITH BEYOND-THE-RAILS INPUT
Power Dissipation
With the high-output drive capability of the EL5221 buffer, it
is possible to exceed the +125°C “absolute-maximum
junction temperature” under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if load
conditions need to be modified for the buffer to remain in the
safe operating area.
The maximum power dissipation allowed in a package is
determined according to:
where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
Θ
JA = Thermal resistance of the Package
PDMAX = Maximum power dissipation in the package
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
when sourcing, and:
when sinking.
where:
i = 1 to 2 for dual buffer
VS = Total supply voltage
ISMAX = Maximum supply current per channel
VOUTi = Maximum output voltage of the application
ILOADi = Load current
If we set the two PDMAX equations equal to each other, we
can solve for RLOADi to avoid device overheat. Figure 3 and
Figure 4 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if PDMAX exceeds the device's power
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figure 3 and Figure 4.
FIGURE 3. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 4. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
1V
10S
VS=±2.5V
TA=25°C
VIN=6VP-P
P
DMAX
T
JMAX - TAMAX
Θ
JA
---------------------------------------------
=
(EQ. 1)
P
DMAX
ΣiV
[
S
I
SMAX
V
S+
(
- V
OUTi )
I
LOADi ]
×
+
×
=
(EQ. 2)
P
DMAX
ΣiV
[
S
I
SMAX
V
(
OUTi - VS- )
I
LOAD i
×
+
×]
=
(EQ. 3)
Package Mounted on a JEDEC JESD51-7 High
Effective Thermal Conductivity Test Board
P
o
we
rDissi
pa
ti
on
(W)
Ambient Temperature (°C)
0.6
0
1
0.8
0.4
0.2
50
150
100
0125
25
75 85
435mW
MAX TJ=125°C
SO
T2
3-6
230
°C/W
870mW
M
S
O
P
-8
11
C
/W
Powe
rD
issip
a
tion
(W
)
Ambient Temperature (°C)
Package Mounted on a JEDEC JESD51-3 Low
Effective Thermal Conductivity Test Board
0.2
0
0.6
0.5
0.1
50
150
100
0125
25
75 85
0.4
0.3
SO
T2
3-6
25
6°C
/W
391mW
MAX TJ=125°C
486mW
M
SO
P-8
20
6°C
/W
EL5221
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