參數(shù)資料
型號(hào): EL5227CL-T13
廠商: Intersil
文件頁(yè)數(shù): 3/17頁(yè)
文件大?。?/td> 0K
描述: IC BUFFER LP OCT 2.5MHZ 24-QFN
標(biāo)準(zhǔn)包裝: 2,500
放大器類型: 緩沖器
電路數(shù): 8
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 2.2 V/µs
-3db帶寬: 2.5MHz
電流 - 輸入偏壓: 2nA
電壓 - 輸入偏移: 1000µV
電流 - 電源: 1.3mA
電流 - 輸出 / 通道: 120mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 16.5 V,±2.25 V ~ 8.25 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 24-QFN-EP
包裝: 帶卷 (TR)
11
FN7111.4
May 4, 2007
Applications Information
Product Description
The EL5127, EL5227, EL5327, and EL5427 unity gain
buffers are fabricated using a high voltage CMOS process. It
exhibits rail-to-rail input and output capability and has low
power consumption (120A per buffer). These features
make the EL5127, EL5227, EL5327, and EL5427 ideal for a
wide range of general-purpose applications. When driving a
load of 10k
Ω and 12pF, the EL5127, EL5227, EL5327, and
EL5427 have a -3dB bandwidth of 2.5MHz and exhibits
2.2V/s slew rate.
Operating Voltage, Input, and Output
The EL5127, EL5227, EL5327, and EL5427 are specified
with a single nominal supply voltage from 5V to 15V or a split
supply with its total range from 5V to 15V. Correct operation
is guaranteed for a supply range of 4.5V to 16.5V. Most
EL5127, EL5227, EL5327, and EL5427 specifications are
stable over both the full supply range and operating
temperatures of -40°C to +85°C. Parameter variations with
operating voltage and/or temperature are shown in the
typical performance curves.
The output swings of the EL5127, EL5227, EL5327, and
EL5427 typically extend to within 80mV of positive and
negative supply rails with load currents of 5mA. Decreasing
load currents will extend the output voltage range even
closer to the supply rails. Figure 22 shows the input and
output waveforms for the device. Operation is from ±5V
supply with a 10k
Ω load connected to GND. The input is a
10VP-P sinusoid. The output voltage is approximately
9.985VP-P.
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE
Typical Performance Curves
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.4
0
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
P
A
TI
ON
(W)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100
125
85
1.111W
1.333W
1.176W
TSSOP28
θJA=75°C/W
TSSOP24
θ
JA=85°C/W
TSSOP20
θ
JA=90°C/W
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
255075
125
150
AMBIENT TEMPERATURE (°C)
POWE
R
DI
SSI
P
A
TI
ON
(W)
100
85
714mW
758mW
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
QFN32
θJA=132°C/W
486mW
MSOP10
θJA=206°C/W
QFN24
θJA=140°C/W
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
255075
100
125
AMBIENT TEMPERATURE (°C)
POWER
DIS
S
IP
A
T
ION
(W
)
85
714mW
833mW
781mW
TSSOP28
θJA=120°C/W
TSSOP24
θJA=128°C/W
TSSOP20
θJA=140°C/W
EL5127, EL5227, EL5327, EL5427
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