參數(shù)資料
型號： EL7563CM
廠商： ELANTEC
元件分類： 穩(wěn)壓器
英文描述： Monolithic 4 Amp DC:DC Step-Down Regulator
中文描述： 5 A SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, PDSO20
封裝： SO-20
文件頁數(shù)： 3/16頁
文件大?。?/td> 635K
代理商： EL7563CM
3
FN7296.2
May 13, 2005
Absolute Maximum Ratings
(T
A
= 25°C)
Supply Voltage between V
IN
or V
DD
and GND . . . . . . . . . . . . +4.5V
V
LX
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
IN
+0.3V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V
DD
+0.3V
V
HI
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V
LX
+6V
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+135°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
DC Electrical Specifications
V
DD
= V
IN
= 3.3V, T
A
= T
J
= 25°C, C
OSC
= 390pF, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
V
REF
Reference Accuracy
1.24
1.26
1.28
V
V
REFTC
Reference Temperature Coefficient
50
ppm/°C
V
REFLOAD
Reference Load Regulation
0 < I
REF
< 50μA
-1
%
V
RAMP
Oscillator Ramp Amplitude
1.15
V
I
OSC_CHG
Oscillator Charge Current
0.1V < V
OSC
< 1.25V
200
μA
I
OSC_DIS
Oscillator Discharge Current
0.1V < V
OSC
< 1.25V
8
mA
I
VDD
+V
DRV
V
DD
+V
DRV
Supply Current
V
EN
= 2.7V, F
OSC
= 120kHz
2
5.5
6.5
mA
I
VDD_OFF
V
DD
Standby Current
EN = 0
1
1.5
mA
V
DD_OFF
V
DD
for Shutdown
2.4
2.65
V
V
DD_ON
V
DD
for Startup
2.6
2.95
V
T
OT
Over Temperature Threshold
135
°C
T
HYS
Over Temperature Hysteresis
20
°C
I
LEAK
Internal FET Leakage Current
EN = 0, L
X
= 3.3V (low FET), L
X
= 0V
(high FET)
10
μA
I
LMAX
Peak Current Limit
5
A
R
DSON
FET On Resistance
Wafer level test only
30
60
m
R
DSONTC
R
DSON
Tempco
0.2
m
/°C
I
STP
Auxiliary Supply Tracking Positive Input
Pull Down Current
V
STP
= V
IN
/2
-4
2.5
μA
I
STN
Auxiliary Supply Tracking Negative Input
Pull Up Current
V
STN
= V
IN
/2
2.5
4
μA
V
PGP
Positive Power Good Threshold
With respect to target output voltage
6
16
%
V
PGN
Negative Power Good Threshold
With respect to target output voltage
-16
-6
%
V
PG_HI
Power Good Drive High
I
PG
= 1mA
2.7
V
V
PG_LO
Power Good Drive Low
I
PG
= -1mA
0.5
V
V
OVP
Over Voltage Protection
10
%
V
FB
Output Initial Accuracy
I
LOAD
= 0A
V
IN
= 3.3V,
V
IN
= 10%, I
LOAD
= 0A
0.977
0.992
1.007
V
V
FB_LINE
Output Line Regulation
0.5
%
V
FB_LOAD
Output Load Regulation
0.5A < I
LOAD
< 4A
0.5
%
V
FB_TC
Output Temperature Stability
-40°C < T
A
< 85°C, I
LOAD
= 2A
±1
%
I
FB
Feedback Input Pull Up Current
V
FB
= 0V
100
200
nA
V
EN_HI
EN Input High Level
2.7
V
V
EN_LO
EN Input Low Level
1
V
I
EN
Enable Pull Up Current
V
EN
= 0
-4
-2.5
μA
EL7563
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