參數(shù)資料
型號(hào)： EL7566DREZ
廠商： INTERSIL CORP
元件分類： 穩(wěn)壓器
英文描述： Monolithic 6 Amp DC-DC Step-Down Regulator
中文描述： 7.8 A SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, PDSO28
封裝： ROHS COMPLIANT, MO-153, HTSSOP-28
文件頁數(shù)： 3/14頁
文件大小： 490K
代理商： EL7566DREZ
3
FN7102.5
December 1, 2004
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Absolute Maximum Ratings
(T
A
= 25°C)
V
IN
, V
DD
to SGND. . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
VX to PGND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
IN
+0.3V
SGND to PGND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
COMP, V
REF
, FB, V
O
, V
TJ
, TM,
SEL, PG, EN, STP, STN, C
OSC
to SGND . . . . . -0.3V to V
DD
+0.3V
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+135°C
Operating Ambient Temperature DRE. . . . . . . . . . . . . 0°C to +85°C
Operating Ambient Temperatute AIRE . . . . . . . . . . .-40°C to +85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
DD
= V
IN
= 3.3V, T
A
= T
J
= 25°C, C
OSC
= 390pF, Unless Otherwise Specified
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
V
IN
Input Voltage Range
3
6
V
V
REF
Reference Accuracy
1.24
1.26
1.28
V
V
REFTC
Reference Temperature Coefficient
50
ppm/°C
V
REFLOAD
Reference Load Regulation
0 < I
REF
< 50μA
-1
%
V
RAMP
Oscillator Ramp Amplitude
1.15
V
I
OSC_CHG
Oscillator Charge Current
0.1V < V
OSC
< 1.25V
200
μA
I
OSC_DIS
Oscillator Discharge Current
0.1V < V
OSC
< 1.25V
8
mA
I
VDD
V
DD
Supply Current
V
EN
= 1 (L disconnected)
2
2.7
5
mA
I
VDD_OFF
V
DD
Standby Current
EN = 0
1
1.5
mA
V
DD_OFF
V
DD
for Shutdown
2.4
2.65
V
V
DD_ON
V
DD
for Startup
2.6
2.95
V
T
OT
Over-temperature Threshold
135
°C
T
HYS
Over-temperature Hysteresis
20
°C
I
LEAK
Internal FET Leakage Current
EN = 0, L
X
= 6V (low FET), L
X
= 0V (high FET)
10
μA
I
LMAX
Peak Current Limit
7.8
A
R
DSON1
PMOS On Resistance
29
50
m
R
DSONTC2
NMOS On Resistance
25
m
R
DSONTC
R
DSON
Tempco
0.2
m
/°C
I
STP
STP Pin Input Pull-down Current
V
STP
= V
IN
/2
-4
2.5
μA
I
STN
STN Pin Input Pull-up Current
V
STN
= V
IN
/2
2.5
4
μA
V
PGP
Positive Power Good Threshold
With respect to target output voltage
6
14
%
V
PGN
Negative Power Good Threshold
With respect to target output voltage
-14
-6
%
V
PG_HI
Power Good Drive High
I
PG
= 1mA
2.6
V
V
PG_LO
Power Good Drive Low
I
PG
= -1mA
0.5
V
V
OVP
Output Overvoltage Protection
10
%
V
FB
Output Initial Accuracy
I
LOAD
= 0A
0.79
0.8
0.81
V
V
FB_LINE
Output Line Regulation
V
IN
= 3.3V,
V
IN
= 10%, I
LOAD
= 0A
0.2
0.5
%
GM
EA
Error Amplifier Transconductance
V
CC
= 0.65V
85
125
165
μs
V
FB_TC
Output Temperature Stability
0°C < T
A
< 85°C, I
LOAD
= 3A
±1
%
F
S
Switching Frequency
300
370
440
kHz
I
FB
Feedback Input Pull-up Current
V
FB
= 0V
100
200
nA
EL7566
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