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參數(shù)資料
| 型號(hào)： | EM033C08T |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package |
| 中文描述： | 低功耗32Kx8 SRAM的引腳兼容的32引腳封裝光盤 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | EM033C08T |
Stock No. 23087-01 12/98
4
EM033C08
NanoAmp Solutions
TABLE 6: Timing
FIGURE 5: Read Cycle Timing (WE = V
IH
)
Item
Symbol
Min/Max
1.5V
1.8V
2.4V
2.7-3.6V
Units
Read Cycle Time
t
RC
t
ASC
t
AHC
t
AA
t
CE
t
OE
t
LZ
t
OLZ
Min
750
250
150
100
ns
Address-Chip Enable Setup Time
Min
-80
-40
-30
-20
ns
Address-Chip Enable Hold Time
Min
600
200
120
75
ns
Address Access Time
Max
750
250
150
100
ns
Chip Enable Access Time
Max
750
250
150
100
ns
Output Enable to Valid Output
Max
250
70
50
30
ns
Chip Enable to Low-Z output
Min
0
0
0
0
ns
Output Enable to Low-Z Output
Min
0
0
0
0
ns
Chip Enable to High-Z Output
t
HZ
Min
Max
Min
Max
0
0
50
0
50
0
40
0
40
0
ns
100
0
100
25
0
25
Output Disable to High-Z Output
t
OHZ
ns
Output Hold from Address Change
t
OH
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
Min
40
20
15
10
ns
Write Cycle Time
Min
750
250
150
100
ns
Chip Enable to End of Write
Min
750
250
150
100
ns
Address Valid to End of Write
Min
750
250
150
100
ns
Address Set-Up Time
Min
0
0
0
0
ns
Write Pulse Width
Min
400
150
75
50
ns
Write Recovery Time
Min
0
0
0
0
ns
Write to High-Z Output
t
WHZ
Min
Max
Min
0
0
70
150
0
50
75
0
ns
150
400
30
50
Data to Write Time Overlap
t
DW
t
DH
t
OW
ns
Data Hold from Write Time
Min
75
35
20
15
ns
End Write to Low-Z Output
Min
40
20
15
10
ns
A0-A14
CE
OE
D0-D7
t
RC
t
CS
t
OE
t
OHZ
t
HZ
t
AA
Data Valid
t
LZ
t
OH
t
OLZ
t
ASC
t
AHC
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