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參數(shù)資料
| 型號(hào)： | EM23C1000 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | High Performance 128K × 8 CMOS ROM(高性能1M位（128K × 8）CMOS ROM) |
| 中文描述： | 高性能的CMOS 128K的× 8光盤（高性能100萬(wàn)位（128K的× 8）的CMOS光盤） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | EM23C1000 |
1
* This specification are subject to be changed without notice.
128K X 8 CMOS ROM
3.13.1996
GENERAL DESCRIPTION
The EM23C1000 series high performance Read Only Memory is organized as 131,072 words by 8 bits. It is
designed to be compatible with all microprocessor and similar applications where high performance large bit
storage and simple interface are important design considerations.
The EM23C1000 series have two type. The one is offer the simplest operation (no power down). Its programmable
chip selects allow up to four 1M ROMs to be Wired-OR without external decoding.
The other one has the automatic power down feature. The power down capability is controlled by the Chip Enable
(CE/CE) input. When CE goes to high or CE goes low, the device will automatically goes to power down mode
and remains in a low power standby mode as long as CE remains high. This unique feature provides system level
power savings as much as 90%. An additional feature of this type is the Output Enable (OE/OE) function. This
eliminates bus connection in multiple bus microprocessor systems.
FEATURES
131,072 x 8 bit organization
Access time 150 ns (max.) at 4.5V
≤
V
CC
≤
5.5V
Low-power consumption:
Operating: 193 mW (max.)
Standby: 165
μ
W (max.)
Fully-static operation
Three-state outputs
Completely TTL compatible.
EM23C1000BP, EM23C1000FP.
EM23C1000BM, EM23C1000FM.
- Non power down version.
- Two programmable chip selects (CS/CS).
EM23C1000AP, EM23C1000EP.
EM23C1000AM, EM23C1000EM.
- Automatic power down (CE/CE).
- Output Enable function (OE/OE).
Package:
EM23C1000AP/BP
EM23C1000AM/BM
EM23C1000EP/FP
- 28 pins 600 mil plastic DIP.
- 28 pins 450 mil plastic SOP.
- 32 pins 600 mil plastic DIP.
EM23C1000 SERIES
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