參數(shù)資料
型號(hào): EM39LV80055RY
廠商: ELAN Microelctronics Corp .
英文描述: 8M Bits (512Kx16) Flash Memory
中文描述: 分位(512Kx16)閃存
文件頁(yè)數(shù): 9/25頁(yè)
文件大?。?/td> 295K
代理商: EM39LV80055RY
EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 9 of
25
CFI Query Identification String*
Address
Data
Data
10H
11H
12H
0051H
0052H
0059H
Query Unique ASCII string “QRY”
13H
14H
0001H
0007H
Primary OEM command set
15H
16H
0000H
0000H
Address for Primary Extend Table
17H
18H
0000H
0000H
Alternate OEM command set (00H=none exists)
19H
1AH
0000H
0000H
Address for Alternate OEM extended Table (00H=none exists)
*
Refer to CFI publication 100 for more details.
Table 4:
CFI Query Identification String1
System Interface
Address
Data
Data
V
DD
Min (Program/Erase)
1BH
0027H
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1CH
0036H
V
DD
Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1DH
0000H
V
PP
min (00H=no V
PP
pin)
1EH
0000H
V
PP
max (00H=no V
PP
pin)
Typical time out for Word-Program 2
N
μ
s (2
4
=16
μ
s)
1FH
0004H
20H
0000H
Typical time out for min size buffer program 2
N
μ
s (00H=not supported)
21H
0004H
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
=16ms)
22H
0006H
Typical time out for Chip-Erase 2
N
ms (2
6
=64ms)
23H
0001H
Maximum time out for Word-Program 2
N
times typical (2
1
x2
4
=32
μ
s)
24H
0000H
Maximum time out for buffer Program 2
N
times typical
25H
0001H
Maximum time out for individual Sector/Block-Erase 2
N
times typical
(2
1
x2
4
=32ms)
26H
0001H
Maximum time out for Chip-Erase 2
N
times typical (2
1
x2
6
=128ms)
Table 5:
System Interface
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