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參數(shù)資料
| 型號(hào)： | EM39LV80090Y |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | 8M Bits (512Kx16) Flash Memory |
| 中文描述： | 分位（512Kx16）閃存 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 295K |
| 代理商： | EM39LV80090Y |
EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 1 of
25
General Description
The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800
uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash
memory technology, the EM39LV800 provides a typical Word-Program time of 14 μsec and a
typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to
detect the completion of the Program or Erase operation. To protect against inadvertent
write, the device has on-chip hardware and software data protection schemes. The device
offers typical 100,000 cycles endurance and a greater than 10 years data retention. The
EM39LV800 conforms with the JEDEC standard pin outs for x16 memories. The
EM39LV800 is offered in package types of 48-ball FBGA, 48-pin TSOP, and known good dice
(KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed
information (see Appendix at the bottom of this specification for Ordering Information).
The EM39LV800 devices are developed for applications that require memories with
convenient and economical updating of program, data or configuration, e.g., DVD player, DVD
R/W, WLAN, Router, Set-Top Box, etc.
Features
Single Power Supply
Full voltage range from 2.7 to 3.6 volts
for both read and write operations
Sector-Erase Capability
Uniform 2Kword sectors
Block-Erase Capability
Uniform 32Kword blocks
Read Access Time
Access time: 55, 70 and 90 ns
Power Consumption
Active current: 20 mA (Typical)
Standby current: 2
μ
A (Typical)
Erase/Program Features
Sector-Erase Time: 18 ms (Typical)
Block-Erase Time: 18 ms (Typical)
Chip-Erase Time: 45 ms (Typical)
Word-Program Time: 14
μ
s (Typical)
Chip Rewrite Time: 8 seconds (Typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Program or End-of-Erase
Detection
Data# Polling
Toggle Bit
CMOS I/O Compatibility
JEDEC Standard
Pin-out and software command sets
compatible with single-power supply Flash
memory
High Reliability
Endurance cycles: 100K (Typical)
Data retention: 10 years
Package Option
48-pin TSOP
48-pin FBGA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EM39LV80070D | DDR-I, 14-Bit Registered Buffer |
| EM39LV80070H | 8M Bits (512Kx16) Flash Memory |
| EM39LV80070M | DDR-I, 13/26-Bit Registered Buffer |
| EM39LV80070Y | 8M Bits (512Kx16) Flash Memory |
| EM39LV80055RH | IC, DIGITAL, OCTAL BUS XCEIVER & 3.3V TO 5.0V, SHFTR BIDRCNTL, V XLATOR, 24PIN T |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM39S | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible |
| EM39S28-19.44-2.5-30 | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible |
| EM39S3-19.44-2.5-30 | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible |
| EM39S5-19.44-2.5-30 | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Clipped Sinewave 14 pin DIL compatible |
| EM39T | 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:HCMOS, 14 pin DIL compatible, MHz Range |
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