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參數(shù)資料
| 型號(hào)： | EM4469V1WT27 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512 bit Read/Write Contactless Identification Device |
| 中文描述： | 512位讀/寫非接觸式識(shí)別裝置 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 305K |
| 代理商： | EM4469V1WT27 |
EM4469
Copyright
2003, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
V
SS
= 0V
Parameter
Input current on
COIL1/COIL2
Operating temperature range
Storage temperature range
Electrostatic discharge to
MIL-STD-883C method 3015
Symbol
Conditions
I
COIL
-30 to +30mA
T
OP
T
STORE
-40 to +85°C
-55 to +125°C
V
ESD
2000V
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields. However due to the unique
properties of this device, anti-static precautions should be
taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the supply voltage
range.
Operating Conditions
V
SS
= 0V
Parameter
Operating temperature
AC voltage on coil pins
Maximum coil current
Frequency on coil pins
Symbol
T
OP
V
COIL1
I
COIL1
F
COIL1
Min.
-40
Typ.
+25
Max. Units
+85
*
10
150
Table 2
-10
100
125
°C
V
pp
mA
kHz
*) Maximum voltage is defined by forcing 10mA on
Coil1 – Coil2
Electrical Characteristics
V
POS
= 2.0 V, V
SS
= 0 V, f
COIL1
= 125 kHz square wave, V
COIL1
= 4V
PP
, T
OP
= 25°C, unless otherwise specified
Parameter
Supply current in read mode
Supply current write mode
Modulator ON voltage drop
Symbol
I
RD
I
WR
Conditions
Min.
Typ.
1.8
25
2.2
2.4
8
1.3
1.4
330
250
75
Max.
3.0
40
2.8
3.2
Unit
μ
A
μ
A
V
V
V
V
V
PP
pF
pF
pF
years
cycles
(Note 1)
V
on1
I (
COIL2
-
COIL1
) =
±
100
μ
A
I (
COIL2
-
COIL1
) =
±
5mA
I (
COIL2
-
COIL1
) =
±
10mA
Rising edge
Limiter
POR level
Clock extractor input min.
Resonance capacitor
V
LIM
V
POR
V
COIL1
C
R
330 pF option
250 pF option
75 pF option
T
OP
= 55°C
V
POS
= 3.0 V
320
245
70
10
100000
340
255
80
(Note 3)
(Note 3)
(Note 3)
(Note 2)
EEPROM data retention
EEPROM write cycles
T
RET
N
CY
Table 3
Note 1:
Note 2:
Note 3:
Data rate f
RF
/64, Manchester code
Based on 1000 hours at 150°C.
applies only on EM4469 device
Timing Characteristics
V
POS
= 2.0 V, V
SS
= 0 V, f
COIL1
= 125 kHz square wave, V
COIL1
= 4V
PP
, T
OP
= 25°C,
Data rate f
RF
/64, Manchester code unless otherwise specified
Parameter
Data Extractor timeout
EEPROM programming time
Power Check time
Initalisation after Write Word
Power-up initialisation
Processing Pause
Symbol
t
MONO
t
Wee
t
PC
t
INI
t
PU
t
PP
Conditions
Min.
20
Typ.
30
6.7
512
928
2.5
544
Max.
40
Unit
μ
s
ms
μ
s
μ
s
ms
μ
s
3.0
Table 4
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