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參數(shù)資料
| 型號： | EM6352XSC3B1.8 |
| 廠商： | EM Microelectronic |
| 英文描述： | Voltage Detector, High-Precision |
| 中文描述： | 電壓檢測器，高精度 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 418K |
| 代理商： | EM6352XSC3B1.8 |
EM6352
Absolute Maximum Ratings
Parameter
Voltage at V
DD
to GND
Minimum voltage at any
signal pin
Maximum voltage at any
signal pin
Electrostatic discharge
max. to MIL-STD-883C
method 3015.7 with ref. to
V
SS
Max. soldering conditions
Storage Temperature
Range
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Electrical Characteristics
Unless otherwise specified: V
DD
= 0.8V to 5.5V, T
A
=+25°C (note 1).
Parameter
Symbol
Copyright
2006, EM Microelectronic-Marin SA
03/06 – rev.I
3
www.emmicroelectronic.com
Symbol
V
DD
Conditions
-0.3V to +6V
V
MIN
GND - 0.3V
V
V
DD
+ 0.3V
V
ESD
2000V
T
MAX
250°C x 10s
T
STG
-65°C to +150°C
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Symbol Min Max Unit
Supply voltage (note 1)
Operating Temperature
V
DD
T
A
0.8
-40 +125
5.5
V
°C
Conditions
+25°C
-40°C to +125°C
+25°C
V
DD
=3.3V
-40°C to +125°C
+25°C
V
DD
=5.0V
-40°C to +125°C
EM6352 – 1.3
EM6352 – 1.4
EM6352 – 1.6
EM6352 – 1.7
EM6352 – 1.8
EM6352 – 2.2
EM6352 – 2.26
EM6352 – 2.6
EM6352 – 2.9
EM6352 – 3.1
EM6352 – 4.4
EM6352 – 4.6
Min
-
-
-
-
-
-
1.290
1.359
1.546
1.635
1.773
2.167
2.226
2.591
2.886
3.034
4.334
4.561
Typ
Max
4.5
7
5.4
8.3
6.3
9.6
1.330
1.401
1.594
1.685
1.827
2.233
2.294
2.669
2.974
3.126
4.466
4.699
Unit
V
DD
=1.5V
2.1
2.7
Supply current (note 2)
I
DD
3.2
μ
A
1.31
1.38
1.57
1.66
1.80
2.20
2.26
2.63
2.93
3.08
4.40
4.63
Threshold voltage
(note 3)
V
TH
V
Threshold voltage
temperature coefficient
(note 4)
Threshold hysteresis
Note 1:
Production tested at +25°C only. Over temperature limits are guaranteed by design, not production tested.
V
DD
min=0.9V for active-high versions (EM6352Z).
Note 2:
RESET
(RESET)
open.
Note 3:
Threshold voltage is specified for V
DD
falling.
Note 4:
Typical variation
V
TH
of V
TH
at a given temperature T
A
is calculated as follows:
V
)
T
T
(
V
A
TH
A
Example:
for version V
TH
=2.93V, variation at T
A
=70°C is equal to
V
TH
(70°C)=±50
10
-6
x 2.93 x (70-25)=±6.59mV
A
TH
T
V
T
A
= -40°C to +125°C
-
±
50
-
ppm/°C
V
HYS
-
2.1%
V
TH
-
V
C
25
T
V
T
TH
A
TH
°
×
×
=
=
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EM6352XSC3B2.2 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Voltage Detector, High-Precision |
| EM6352XSC3B2.26 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Voltage Detector, High-Precision |
| EM6352XSC3B2.6 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Voltage Detector, High-Precision |
| EM6352XSC3B2.9 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Voltage Detector, High-Precision |
| EM6352XSC3B3.1 | 制造商:EMMICRO 制造商全稱:EM Microelectronic - MARIN SA 功能描述:Voltage Detector, High-Precision |
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