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參數(shù)資料
| 型號(hào)： | EM6K1T2R |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (30V, 0.1A) |
| 中文描述： | 小開關(guān)（30V的，0.1A） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | EM6K1T2R |
EM6K1
Transistor
Small switching (30V, 0.1A)
EM6K1
!
Features
1) Two 2SK3019 transistors in a single EMT package.
2) The MOSFET elements are independent, eliminating
interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
!
Applications
Interfacing, switching (30V, 100mA)
!
External dimensions
(Units : mm)
Each lead has same dimensions
Abbreviated symbol : K1
EMT6
0
1.2
1.6
(1)
(2)
(5)
(6)
(3)
(4)
0
0
0
0
1
1
!
Structure
Silicon N-channel
MOSFET
!
Packaging specifications
Taping
EM6K1
Type
T2R
8000
Package
Basic ordering unit
(pieces)
Code
!
Equivalent circuit
(1)
Gate
Protection
Diode
Tr1
Tr2
Gate
Protection
Diode
A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
(2)
(3)
(4)
(5)
(6)
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
V
V
mA
mA
mW/TOTAL
120mW/1ELEMENT
°
C
°
C
mA
mA
V
DSS
V
GSS
I
DR
P
D
Tch
I
D
I
DRP
I
DP
Tstg
Symbol
30
±
20
100
400
100
400
150
150
55~
+
150
Limits
Unit
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 With each pin mounted on the recommended lands.
Drain
source voltage
Gate
source voltage
Drain current
Reverse drain current
Total power dissipation (Tc=25
°
C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1
1
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM6K31 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch Nch MOSFET |
| EM6K31_1009 | 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Nch Nch MOSFET |
| EM6K31T2R | 功能描述:TRANS MOSFET N-CH 60V 0.25A EMT6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| EM6K33 | 制造商:ROHM 制造商全稱:Rohm 功能描述:1.2V Drive Nch + Nch MOSFET |
| EM6K34 | 制造商:ROHM 制造商全稱:Rohm 功能描述:0.9V Drive Nch + Nch MOSFET |
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