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參數(shù)資料
| 型號： | EM78P468NBQ |
| 廠商： | ELAN Microelctronics Corp . |
| 元件分類： | 8位微控制器 |
| 英文描述： | 8-BIT MICROCONTROLLER |
| 中文描述： | 8位微控制器 |
| 文件頁數(shù)： | 42/82頁 |
| 文件大小： | 1491K |
| 代理商： | EM78P468NBQ |
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EM78P468N
8-BIT Microcontroller
4.7 Power-on Considerations
ted to start operating properly before
steady state. This LSI is equipped with Power On Reset
ge of 1.9V to 2.1V. The circuitry eliminates the extra
only if the VDD rises quickly enough (50 ms or
ions, extra devices are still required to assist in
(POR)
external reset circuit but will work well
less). However, under critical applicat
ower-on problems.
solving p
4.7
t Circuit
e a reset pulse (see Fig.12). The pulse
width (time constant) should be kept long enough to allow VDD to reach minimum
operation voltage. This circuit is used when the po
the current leakage from the /RESET pin is about
±
not be great than 40K. In this way, the voltage at Pin /RESET is held below 0.2V. The
diode (D) acts as a short circuit at power-down. The capacitor, C, is discharg
and fully. Rin, the current-limited r
(ele trostatic discharge) from flowing into Pin /RESET.
wer supply rise time is slow. Because
5
μ
A, it is recommended that R should
ed rapidly
esistor, prevents high current discharge or ESD
Any microcontroller (as with this LSI) is not warran
the power supply stabilizes in
with detection level ran
.1
External Power-on Rese
This circuit implements an external RC to produc
Fig. 12 External Power on Reset Circui
t
.2
Residue-Voltage Protection
When battery is replaced, device power (VDD) is disconnected but residue-voltage
remains. The residue-voltage may trips below minimum VDD, but above zero. This
condition may cause poor power on reset. Fig.13 and Fig.14 show how to build a
residue-voltage protection circuit
4.7
Fig. 13
Protection
Circuit 1 for the Residue Voltage
38
Product Specification (V1.2) 03.15.2005
(This specification is subject to change without further notice)
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