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參數(shù)資料
| 型號： | EMC2DXV5T5 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Common Base-Collector Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 463B-01, 5 PIN |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 72K |
| 代理商： | EMC2DXV5T5 |
EMC2DXV5T1, EMC5DXV5T1
http://onsemi.com
8
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25
°
C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
INFORMATION FOR USING THE SOT553 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the to-
tal design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the cor-
rect pad geometry, the packages will self align when sub-
jected to a solder reflow process.
SOT553 POWER DISSIPATION
P
D
=
T
J(max)
T
A
R
JA
P
D
=
150
°
C 25
°
C
833
°
C/W
= 150 milliwatts
The power dissipation of the SOT553 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, R
JA
, the thermal resistance from the device
junction to ambient, and the operating temperature, T
A
. Us-
ing the values provided on the data sheet for the SOT553
package, P
D
can be calculated as follows:
The 833
°
C/W for the SOT553 package assumes the use
of the recommended footprint on a glass epoxy printed cir-
cuit board to achieve a power dissipation of 150 milliwatts.
There are other alternatives to achieving higher power dis-
sipation from the SOT553 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
. Using a board material such
as Thermal Clad, an aluminum core board, the power dis-
sipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in or-
der to minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and solder-
ing should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering meth-
od, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the maxi-
mum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
SOT553
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