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參數(shù)資料
| 型號： | EMF23XV6T5 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Transistor-Power Management(雙晶體管-電源管理) |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | EMF23XV6T5 |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 1
1
Publication Order Number:
EMF23XV6/D
EMF23XV6T5
Dual Transistor
Power Management
NPN/PNP Dual (Complimentary)
Features
Low V
CE(SAT)
,
These are PbFree Devices
0.5 V
MAXIMUM RATINGS
Q1
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Q2
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
V
CollectorBase Voltage
V
CBO
50
V
EmitterBase Voltage
V
EBO
6.0
V
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
350
(Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/
°
C
Thermal Resistance,
Junction-to-Ambient
R
JA
250
(Note 1)
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ Minimum Pad.
SOT563
CASE 463A
STYLE 1
(1)
(2)
Q
2
http://onsemi.com
UW = Specific Device Code
M
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
EMF23XV6T5
SOT563
(PbFree)
8000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Q
1
R
2
R
1
(3)
(4)
(5)
(6)
EMF23XV6T5G
SOT563
(PbFree)
8000/Tape & Reel
UW M
1
1
6
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| EMG5DXV5T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| EMIF01-100 | EMI FILTER/TVS ARRAY |
| EMIF01-150 | EMI FILTER/TVS ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMF23XV6T5G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 Dual Complementary NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMF24 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual trnasistors) |
| EMF24T2R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| EMF32 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
| EMF32_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
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