- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362694 > EN25F40-100QI (Eon Silicon Solution Inc.) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | EN25F40-100QI |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 15/33頁 |
| 文件大?。?/td> | 477K |
| 代理商： | EN25F40-100QI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
is t
SE
) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a sector which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3) is not executed.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/09
EN25F40
Block Erase (BE) (D8h/52h)
The Block Erase (BE) instruction sets to 1 (FFh) all bits inside the chosen block. Before it can be accepted,
a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN)
instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Block Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code, and three address bytes on Serial Data Input (DI). Any address inside the Block (see Table 2) is a
valid address for the Block Erase (BE) instruction. Chip Select (CS#) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Block Erase (BE) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Block Erase cycle (whose duration is t
SE
) is
initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write
Enable Latch (WEL) bit is reset.
A Block Erase (BE) instruction applied to a block which is protected by the Block Protect (BP2, BP1, BP0)
bits (see Table 3) is not executed.
相關PDF資料 |
PDF描述 |
|---|---|
| EN25F40-100QIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-100VC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-100VCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-100VI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-100VIP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EN25F40-100QIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-100VC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-100VCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-100VI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-100VIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
發(fā)布緊急采購，3分鐘左右您將得到回復。