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參數(shù)資料
| 型號： | EN25F40-100VIP |
| 廠商： | Eon Silicon Solution Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 13/33頁 |
| 文件大?。?/td> | 477K |
| 代理商： | EN25F40-100VIP |
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Read Data Bytes at Higher Speed (FAST_READ) (0Bh)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a dummy
byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory contents, at
that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a maximum
frequency F
R
, during the falling edge of Serial Clock (CLK).
The instruction sequence is shown in Figure 10.. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The
whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the
read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes at
Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in progress.
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2007/05/09
EN25F40
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the in-
struction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8 least
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN25F40-75GC | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-75GCP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-75GI | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-75GIP | 4 Mbit Uniform Sector, Serial Flash Memory |
| EN25F40-75HC | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN25F40-100WCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-100WIP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-75GC | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-75GCP | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector |
| EN25F40-75GI | 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:4 Mbit Serial Flash Memory with 4Kbytes Uniform Sector |
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